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2SB1255 Datasheet Silicon PNP Transistor

Manufacturer: Panasonic

Overview: Power Transistors 2SB1255 Silicon PNP epitaxial planar type Darlington For power amplification Complementary to 2SD1895 Unit: mm 15.0±0.3 11.0±0.2 5.0±0.2 3.

Key Features

  • q q q q 16.2±0.5 12.5 3.5 Solder Dip Optimum for 90W HiFi output High foward current transfer ratio hFE: 5000 to 30000 Low collector to emitter saturation voltage VCE(sat): <.
  • 2.5V Full-pack package which can be installed to the heat sink with one screw (TC=25˚C) Ratings.
  • 160.
  • 140.
  • 8.
  • 12.
  • 15 100 3 150.
  • 55 to +150 Unit V V V A A W ˚C ˚C 0.7 21.0±0.5 15.0±0.2 φ3.2±0.1 2.0±0.2 2.0±0.1 0.6±0.2 s Absolute Maximum Ratings Parameter Collec.

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