Datasheet4U Logo Datasheet4U.com

2SB1255 Datasheet

The 2SB1255 is a Silicon PNP Transistor. Download the datasheet PDF and view key features and specifications below.

Part Number2SB1255
ManufacturerPanasonic
Overview Power Transistors 2SB1255 Silicon PNP epitaxial planar type Darlington For power amplification Complementary to 2SD1895 Unit: mm 15.0±0.3 11.0±0.2 5.0±0.2 3.2 s Features q q q q 16.2±0.5 12.5 3.5 S. q q q q 16.2±0.5 12.5 3.5 Solder Dip Optimum for 90W HiFi output High foward current transfer ratio hFE: 5000 to 30000 Low collector to emitter saturation voltage VCE(sat): <
*2.5V Full-pack package which can be installed to the heat sink with one screw (TC=25˚C) Ratings
*160
*140
*8
*12
*15 100 3.
Part Number2SB1255
DescriptionSILICON POWER TRANSISTOR
ManufacturerSavantIC
Overview ·With TO-3PFa package ·Optimum for 90W Hi-Fi output ·High foward current transfer ratio hFE ·Low collector-emitter saturation voltage ·Complement to type 2SD1895 APPLICATIONS ·Power amplification PINN. Base-emitter saturation voltage Collector cut-off current Collector cut-off current Emitter cut-off current DC current gain DC current gain Transition frequency CONDITIONS IC=-30mA ; IB=0 IC=-7A ;IB=-7mA IC=-7A ;IB=-7mA VCB=-160V; IE=0 VCE=-140V; IB=0 VEB=-5V; IC=0 IC=-1A ; VCE=-5V IC=-7A ; VCE=-5V.
Part Number2SB1255
DescriptionPNP Transistor
ManufacturerInchange Semiconductor
Overview ·High DC Current Gain- : hFE= 5000(Min)@IC= -6A ·Low-Collector Saturation Voltage- : VCE(sat)= -2.5V(Max.)@IC= -7A ·Complement to Type 2SD1895 ·Minimum Lot-to-Lot variations for robust device performa. O Collector-Emitter Breakdown Voltage IC= -30mA; IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= -7A; IB= -7mA VBE(sat) Base-Emitter Saturation Voltage IC= -7A; IB= -7mA ICBO Collector Cutoff Current VCB= -160V; IE= 0 ICEO Collector Cutoff Current VCE= -140V; IB= 0 IEBO Emitter Cu.

Similar Datasheets

Part Number Manufacturer Description
B1255 Panasonic 2SB1255