B1255 - 2SB1255

Features

q Optimum for 90W HiFi output q High foward current transfer ratio hFE: 5000 to 30000 q Low collector to emitter saturation voltage VCE(sat): <.
2.5V q Full-pack package which can be installed to the heat sink with one screw 21.0±0.5 15.0±0.3 11.0±0.2 φ3.2±0.1 5.0±0.2 3.2 2.0±0.2 2.0±0.1 Solder Dip 16.2±0.5 s Absolute Maximum Ratings (TC=25˚C) Parameter Symbol Ratings Unit 1.1±0.1 5.45±0.3 10.9±0.5 0.6±0.2 Collector to base voltage Collector to emitter voltage Emitter to.

Panasonic

Datasheet Details

Part number	B1255
Manufacturer	Panasonic
File Size	73.46 KB
Description	2SB1255
Datasheet	B1255 Datasheet
Additional preview pages of the B1255 datasheet.

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Full PDF Text Transcription

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Power Transistors 2SB1255 Silicon PNP epitaxial planar type Darlington For power amplification Complementary to 2SD1895 Unit: mm 12.5 3.5 15.0±0.2 0.7 s Features q Optimum for 90W HiFi output q High foward current transfer ratio hFE: 5000 to 30000 q Low collector to emitter saturation voltage VCE(sat): < –2.5V q Full-pack package which can be installed to the heat sink with one screw 21.0±0.5 15.0±0.3 11.0±0.2 φ3.2±0.1 5.0±0.2 3.2 2.0±0.2 2.0±0.1 Solder Dip 16.2±0.5 s Absolute Maximum Ratings (TC=25˚C) Parameter Symbol Ratings Unit 1.1±0.1 5.45±0.3 10.9±0.5 0.6±0.

Published: Oct 4, 2015 |