B1252 - Power Transistors

Features

q Optimum for 35W HiFi output q High foward current transfer ratio hFE: 5000 to 30000 q Low collector to emitter saturation voltage VCE(sat): < 2.5V q Full-pack package which can be installed to the heat sink with one screw s Absolute Maximum Ratings (TC=25˚C) 14.0±0.5 Solder Dip 4.0 16.7±0.3 7.5±0.2 φ3.1±0.1 1.3±0.2 1.4±0.1 0.8±0.1 0.5 +0.2.
0.1 Parameter Symbol Ratings Unit 2.54±0.25 Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak coll.

Panasonic

Datasheet Details

Part number	B1252
Manufacturer	Panasonic
File Size	73.22 KB
Description	Power Transistors
Datasheet	B1252 Datasheet
Additional preview pages of the B1252 datasheet.

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Full PDF Text Transcription

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Power Transistors 2SB1252 Silicon PNP epitaxial planar type Darlington For power amplification Complementary to 2SD1892 10.0±0.2 5.5±0.2 Unit: mm 4.2±0.2 2.7±0.2 0.7±0.1 4.2±0.2 s Features q Optimum for 35W HiFi output q High foward current transfer ratio hFE: 5000 to 30000 q Low collector to emitter saturation voltage VCE(sat): < 2.5V q Full-pack package which can be installed to the heat sink with one screw s Absolute Maximum Ratings (TC=25˚C) 14.0±0.5 Solder Dip 4.0 16.7±0.3 7.5±0.2 φ3.1±0.1 1.3±0.2 1.4±0.1 0.8±0.1 0.5 +0.2 –0.1 Parameter Symbol Ratings Unit 2.54±0.

Published: Apr 1, 2019 |