With TO-3PFa package
Optimum for 90W Hi-Fi output
High foward current transfer ratio hFE
Low collector-emitter saturation voltage
Complement to type 2SD1895 APPLICATIONS
Power amplification
PINNING PIN 1 2 3 Base Collector Emitter DESCRIPTION
Absolute maximum ratings(T
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SavantIC Semiconductor
www.DataSheet4U.com
Product Specification
Silicon PNP Darlington Power Transistors
2SB1255
DESCRIPTION ·With TO-3PFa package ·Optimum for 90W Hi-Fi output ·High foward current transfer ratio hFE ·Low collector-emitter saturation voltage ·Complement to type 2SD1895 APPLICATIONS ·Power amplification
PINNING PIN 1 2 3 Base Collector Emitter DESCRIPTION
Absolute maximum ratings(Ta=25 )
SYMBOL VCBO VCEO VEBO IC ICP PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-peak TC=25 PC Collector power dissipation 3 Tj Tstg Junction temperature Storage temperature 150 -55~150 CONDITIONS Open emitter Open base Open collector VALUE -160 -140 -8 -15 -12 100 W UNIT V V V A A
SavantIC Semiconductor
www.DataSheet4U.
2SB1255 Datasheet
