q q q q
16.2±0.5 12.5 3.5 Solder Dip
Optimum for 40W HiFi output High foward current transfer ratio hFE: 5000 to 30000 Low collector to emitter saturation voltage VCE(sat): <.
2.5V Full-pack package which can be installed to the heat sink with one screw (TC=25˚C)
Ratings.
130.
110.
5.
10.
6 50 3 150.
55 to +150 Unit V V V A A W ˚C ˚C
0.7
21.0±0.5 15.0±0.2
φ3.2±0.1
2.0±0.2
2.0±0.1 0.6±0.2
s Absolute Maximum Ratings
Parameter Collecto.
Silicon PNP triple diffusion planer type Transistor
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Power Transistors
2SB1253
Silicon PNP epitaxial planar type Darlington
For power amplification Complementary to 2SD1893
Unit: mm
15.0±0.3 11.0±0.2 5.0±0.2 3.2
s Features
q q q q
16.2±0.5 12.5 3.5 Solder Dip
Optimum for 40W HiFi output High foward current transfer ratio hFE: 5000 to 30000 Low collector to emitter saturation voltage VCE(sat): < –2.5V Full-pack package which can be installed to the heat sink with one screw (TC=25˚C)
Ratings –130 –110 –5 –10 –6 50 3 150 –55 to +150 Unit V V V A A W ˚C ˚C
0.7
21.0±0.5 15.0±0.2
φ3.2±0.1
2.0±0.2
2.0±0.1 0.6±0.
2SB1253 Datasheet
