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2SB1253 Datasheet

The 2SB1253 is a Silicon PNP Transistor. Download the datasheet PDF and view key features and specifications below.

Part Number2SB1253
ManufacturerPanasonic
Overview Power Transistors 2SB1253 Silicon PNP epitaxial planar type Darlington For power amplification Complementary to 2SD1893 Unit: mm 15.0±0.3 11.0±0.2 5.0±0.2 3.2 s Features q q q q 16.2±0.5 12.5 3.5 S. q q q q 16.2±0.5 12.5 3.5 Solder Dip Optimum for 40W HiFi output High foward current transfer ratio hFE: 5000 to 30000 Low collector to emitter saturation voltage VCE(sat): <
*2.5V Full-pack package which can be installed to the heat sink with one screw (TC=25˚C) Ratings
*130
*110
*5
*10
*6 50 3 1.
Part Number2SB1253
DescriptionPNP Transistor
ManufacturerInchange Semiconductor
Overview ·High DC Current Gain- : hFE= 5000(Min)@IC= -5A ·Low-Collector Saturation Voltage- : VCE(sat)= -2.5V(Max.)@IC= -5A ·Complement to Type 2SD1893 ·Minimum Lot-to-Lot variations for robust device performa. cified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= -30mA; IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= -5A; IB= -5mA VBE(sat) Base-Emitter Saturation Voltage IC= -5A; IB= -5mA ICBO Collector Cutoff Current VCB= -130V; IE= 0 ICEO Collector Cutof.

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