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2SB1207 - Silicon PNP epitaxial planer type Transistor

Datasheet Summary

Features

  • q q q Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg Ratings.
  • 15.
  • 10.
  • 7.
  • 1.
  • 0.5 300 150.
  • 55 ~ +150 Unit V V 1 2 3 1.27 1.27 V A A mW ˚C ˚C 1:Emitter 2:Collector 3:Base 2.54±0.15 EIAJ:SC.
  • 72 New S Type Package s Electrical Characteristics Pa.

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Datasheet Details

Part number 2SB1207
Manufacturer Panasonic Semiconductor
File Size 36.80 KB
Description Silicon PNP epitaxial planer type Transistor
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Transistor 2SB1207 Silicon PNP epitaxial planer type For low-voltage output amplification Unit: mm 4.0±0.2 3.0±0.2 0.7±0.1 s Features q q q Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg Ratings –15 –10 –7 –1 – 0.5 300 150 –55 ~ +150 Unit V V 1 2 3 1.27 1.27 V A A mW ˚C ˚C 1:Emitter 2:Collector 3:Base 2.54±0.
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