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2SB1209 - Silicon PNP triple diffusion planer type Transistor

Datasheet Summary

Features

  • q q q 1.5 R0.9 R0.9 0.4 2.4±0.2 2.0±0.2 3.5±0.1 High collector to base voltage VCBO. High collector to emitter voltage VCEO. Low collector to emitter saturation voltage VCE(sat). 1.0 0.45±0.05 1 1.0±0.1 R 0. 7 0.85 Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature.
  • Symbol VCBO VCEO VEBO ICP IC PC.
  • Tj Tstg Ratings.
  • 400.

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Datasheet Details

Part number 2SB1209
Manufacturer Panasonic Semiconductor
File Size 38.43 KB
Description Silicon PNP triple diffusion planer type Transistor
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Full PDF Text Transcription

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Transistor 2SB1209 Silicon PNP triple diffusion planer type For low-frequency amplification Unit: mm 6.9±0.1 1.5 2.5±0.1 1.0 s Features q q q 1.5 R0.9 R0.9 0.4 2.4±0.2 2.0±0.2 3.5±0.1 High collector to base voltage VCBO. High collector to emitter voltage VCEO. Low collector to emitter saturation voltage VCE(sat). 1.0 0.45±0.05 1 1.0±0.1 R 0. 7 0.85 Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature * Symbol VCBO VCEO VEBO ICP IC PC* Tj Tstg Ratings –400 –400 –5 –200 –100 1 150 –55 ~ +150 1cm2 Unit V V V mA mA W ˚C ˚C 1:Base 2:Collector 3:Emitter 2.5 2.
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