2SB1201 Datasheet PDF - Sanyo Semicon Device PNP/NPN Epitaxial Planar Silicon Transistors Specs

2SB1201 - PNP/NPN Epitaxial Planar Silicon Transistors

Datasheet Summary

Features

Adoption of FBET, MBIT processes.
Large current capacitance and wide ASO.
Low collector-to-emitter saturation voltage.
Fast switching speed.
Small and slim package making it easy to make 2SB1201/2SD1801-used sets smaller Speciﬁcations ( ): 2SB1201 Absolute Maximum Ratings at Ta=25°C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Symbol VCBO VCEO VEBO IC ICP.

Datasheet Details

Part number	2SB1201
Manufacturer	Sanyo Semicon Device
File Size	352.05 KB
Description	PNP/NPN Epitaxial Planar Silicon Transistors
Datasheet	2SB1201 Datasheet
Additional preview pages of the 2SB1201 datasheet.

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Full PDF Text Transcription

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Ordering number : EN2112C 2SB1201/2SD1801 SANYO Semiconductors DATA SHEET 2SB1201/2SD1801 PNP/NPN Epitaxial Planar Silicon Transistor High-Current Switching Applications Applications • Voltage regulators, relay drivers, lamp drivers, electrical equipment Features • Adoption of FBET, MBIT processes • Large current capacitance and wide ASO • Low collector-to-emitter saturation voltage • Fast switching speed • Small and slim package making it easy to make 2SB1201/2SD1801-used sets smaller Speciﬁcations ( ): 2SB1201 Absolute Maximum Ratings at Ta=25°C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Symbol VCBO VCEO VEBO IC ICP Conditions Ratings (--)60 (--)50 (--)6 (--)2 (--)4 Unit V V V A A

Published: Mar 22, 2005 |