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Darlington
2SB1257
(2 k Ω)(6 5 0Ω) E
B Equivalent circuit C
Silicon PNP Epitaxial Planar Transistor (Complement to type 2SD2014)
Application : Driver for Solenoid, Relay and Motor and General Purpose
sAbsolute maximum ratings (Ta=25°C)
Symbol
Ratings
Unit
VCBO
–60
V
VCEO
–60
V
VEBO
–6
V
IC
–4(Pulse–6)
A
IB
–1
A
PC
25(Tc=25°C)
W
Tj
150
°C
Tstg
–55 to +150
°C
sElectrical Characteristics
Symbol ICBO IEBO V(BR)CEO hFE VCE(sat) VBE(sat) fT COB
Conditions VCB=–60V VEB=–6V IC=–10mA VCE=–4V, IC=–3A IC=–3A, IB=–6mA IC=–3A, IB=–6mA VCE=–12V, IE=0.2A VCB=–10V, f=1MHz
sTypical Switching Characteristics (Common Emitter)
VCC
RL
IC
VBB1
VBB2
IB1
(V)
(Ω)
(A)
(V)
(V)
(mA)
–30
10
–3
–10
5
–10
IB2 (mA)
10
ton (µs)
0.
2SB1257 Datasheet
