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Darlington
2SB1259
(3 k Ω)(1 0 0Ω) E
B Equivalent circuit C
Silicon PNP Epitaxial Planar Transistor (Complement to type 2SD2081)
Application : Driver for Solenoid, Relay and Motor and General Purpose
sAbsolute maximum ratings
Symbol
Ratings
VCBO
–120
VCEO
–120
VEBO
–6
IC
–10(Pulse–15)
IB
–1
PC
30(Tc=25°C)
Tj
150
Tstg
–55 to +150
(Ta=25°C) Unit V V V A A W °C °C
sElectrical Characteristics
Symbol
Conditions
ICBO IEBO V(BR)CEO hFE VCE(sat) VBE(sat) fT COB
VCB=–120V VEB=–6V IC=–10mA
VCE=–4V, IC=–5A IC=–5A, IB=–10mA IC=–5A, IB=–10mA VCE=–12V, IE=0.2A VCB=–10V, f=1MHz
sTypical Switching Characteristics (Common Emitter)
VCC
RL
IC
VBB1
VBB2
IB1
(V)
(Ω)
(A)
(V)
(V)
(mA)
–30
10
–3
–10
5
–6
IB2 (mA)
6
ton (µs)
0.
2SB1259 Datasheet
