Diodes Incorporated
B160B - 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER
B120/B - B160/B
1.0A SURFACE-MOUNT SCHOTTKY BARRIER RECTIFIER
Product Summary
B120/B, B130/B, B140/B
VRRM (V) 20/30/40
IO (A) 1.0
B150/B, B160/B
Rating:
1
★
(5 votes)
Winbond
W19B160BB - CMOS flash memory
W19B160BT/B DATA SHEET
-Table of Contents1. 2. 3. www.DataSheet4U.com 4. 5. 6. GENERAL DESCRIPTION
Rating:
1
★
(5 votes)
Mitsubishi
M5M29GB160BVP-80 - 16 /777 /216-BIT (2097 /152-WORD BY 8-BIT / 1048 /576-WORD BY16-BIT)CMOS 3.3V-ONLY / BLOCK ERASE FLASH MEMORY
MITSUBISHI LSIs
M5M29GB/T160BVP-80
16,777,216-BIT (2097,152-WORD BY 8-BIT / 1048,576-WORD BY16-BIT)
CMOS 3.3V-ONLY, BLOCK ERASE FLASH MEMORY DESCRIPT
Rating:
1
★
(3 votes)
Winbond
W19B160BT - CMOS flash memory
W19B160BT/B DATA SHEET
-Table of Contents1. 2. 3. www.DataSheet4U.com 4. 5. 6. GENERAL DESCRIPTION
Rating:
1
★
(3 votes)
Diodes
B160BQ - 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER
Green B120Q/BQ - B160Q/BQ
1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER
Product Summary
B120Q/BQ-B140Q/BQ
VRRM (V) 20/30/40
IO (A) 1.0
B150Q/BQ,
Rating:
1
★
(3 votes)
MacMic
MMD110AB160B - Rectifier Diode
March 2017
PRODUCT FEATURES
□ Low Forward Voltage □ High Surge Current Capability □ Low Leakage Current □ Low Inductance Package
Version 2
MMD110AB1
Rating:
1
★
(3 votes)
Mitsubishi
M5M29GB160BVP - 16 /777 /216-BIT (2097 /152-WORD BY 8-BIT / 1048 /576-WORD BY16-BIT)CMOS 3.3V-ONLY / BLOCK ERASE FLASH MEMORY
MITSUBISHI LSIs
M5M29GB/T160BVP-80
16,777,216-BIT (2097,152-WORD BY 8-BIT / 1048,576-WORD BY16-BIT)
CMOS 3.3V-ONLY, BLOCK ERASE FLASH MEMORY DESCRIPT
Rating:
1
★
(2 votes)
MacMic
MMD160AB160B - Rectifier Diode
March 2017
PRODUCT FEATURES
□ Low Forward Voltage □ High Surge Current Capability □ Low Leakage Current □ Low Inductance Package
Version 2
MMD160AB1
Rating:
1
★
(1 votes)