B41N Datasheet | Specifications & PDF Download

IRFB41N15DPbF IRFIB41N15DPbF IRFS41N15DPbF IRFSL41N15DPbF Applications  High frequency DC-DC converters Benefits  Low Gate-to-Drain Charge to Reduc

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IRFB41N15DPbF IRFIB41N15DPbF IRFS41N15DPbF IRFSL41N15DPbF Applications  High frequency DC-DC converters Benefits  Low Gate-to-Drain Charge to Reduc

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SMPS MOSFET PD- 93804A IRFB41N15D IRFS41N15D IRFSL41N15D HEXFET® Power MOSFET Applications l High frequency DC-DC converters VDSS 150V RDS(on) max

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Isc N-Channel MOSFET Transistor ·FEATURES ·With TO-220F package ·Low input capacitance and gate charge ·Low gate input resistance ·Reduced switching a

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www.DataSheet4U.com PD - 94927A Applications l l IRFB41N15DPbF IRFIB41N15DPbF IRFS41N15DPbF IRFSL41N15DPbF HEXFET® Power MOSFET High frequency DC-

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RFMD + TriQuint = Qorvo TQF6297 B7/B30/B38/B40/B41N Front-End Module (FEM) Applications  TD-LTE Smartphones, Tablets and Handsets  Datacards Prod

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isc N-Channel MOSFET Transistor IRFB41N15D，IIRFB41N15D ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤45mΩ ·Enhancement mode ·Fast Switching

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www.DataSheet4U.com PD - 94927A Applications l l IRFB41N15DPbF IRFIB41N15DPbF IRFS41N15DPbF IRFSL41N15DPbF HEXFET® Power MOSFET High frequency DC-

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Applications l High frequency DC-DC converters Benefits l Low Gate-to-Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Includ

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Applications l High frequency DC-DC converters Benefits l Low Gate-to-Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Includ

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MB9AB40NB Series 32-bit ARM® Cortex®-M3 based Microcontroller MB9AFB41LB/MB/NB, MB9AFB42LB/MB/NB, MB9AFB44LB/MB/NB Data Sheet (Full Production) Notice

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RFMD + TriQuint = Qorvo TQF6297H B7/B30/B38/B40/B41N Front-End Module (FEM) Applications  TD-LTE Smartphones, Tablets and Handsets  Datacards Prod

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