B992 Datasheet | Specifications & PDF Download

CEP9926/CEB9926 N-Channel Enhancement Mode Field Effect Transistor FEATURES 20V, 20A,RDS(ON) = 30mΩ @VGS = 4.5V. RDS(ON) = 40mΩ @VGS = 2.5V. Super h

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 Choice of logic and output driver circuits  Choice of aperture size, covered or open  Wire or PCB leads  Choice of mounting features  Direct TTL

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EURO QUARTZ www.DataSheet4U.com CERAMIC RESONATORS ZTB SERIES ZTB SERIES 700kHz to 999kHz Test Circuit ZTB Series 700kHz to 999kHz 2.2 5.0 Vdd 1/

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INCHANGE Semiconductor isc Silicon PNP Power Transistor Product Specification 2SB992 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -

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1CY 7B9 92 0 fax id: 3516 CY7B9910 CY7B9920 Low Skew Clock Buffer Features • • • • • • • • • All outputs skew <100 ps typical (250 max.) 15- to 80-

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1CY 7B9 92 0 fax id: 3516 CY7B9910 CY7B9920 Low Skew Clock Buffer Features • • • • • • • • • All outputs skew <100 ps typical (250 max.) 15- to 80-

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92 CY7B991 CY7B992 Programmable Skew Clock Buffer Features • All output pair skew <100 ps typical (250 max.) • 3.75- to 80-MHz output operation • Us

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SavantIC Semiconductor www.DataSheet4U.com Product Specification Silicon PNP Power Transistors 2SB992 DESCRIPTION ·With TO-220 package ·Low collec

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isc Silicon PNP Power Transistor 2SB992 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -80V(Min) ·Collector Power Dissipation- : PC=

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2SB992 SILICON PNP TRIPLE DIFFUSED TYPE (PCT PROCESS) HIGH CURRENT SWITCHING APPLICATIONS. POWER AMPLIFIER APPLICATIONS. FEATURES . High Collector C

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