CEB9926 Datasheet, Mosfet, CET

CEB9926 Features

• Mosfet 20V, 20A,RDS(ON) = 30mΩ @VGS = 4.5V. RDS(ON) = 40mΩ @VGS = 2.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is

PDF File Details

Part number:

CEB9926

Manufacturer:

CET

File Size:

60.68kb

Download:

📄 Datasheet

Description:

N-channel mosfet.

TAGS

CEB9926

CET

📁 Related Datasheet

CEB9055 - N-Channel MOSFET (CET)
CEP9055/CEB9055 CEF9055 N-Channel Enhancement Mode Field Effect Transistor FEATURES Type CEP9055 CEB9055 CEF9055 VDSS 55V 55V 55V RDS(ON) 10.5mΩ 1.

CEB9060N - N-Channel MOSFET (CET)
CEP9060N/CEB9060N CEF9060N N-Channel Enhancement Mode Field Effect Transistor FEATURES Type CEP9060N CEB9060N CEF9060N VDSS 55V 55V 55V RDS(ON) 10.

CEB9060R - N-Channel MOSFET (CET)
CEP9060R/CEB9060R CEF9060R N-Channel Enhancement Mode Field Effect Transistor FEATURES Type CEP9060R CEB9060R CEF9060R VDSS 55V 55V 55V RDS(ON) 10.5mΩ.

CEB93A3 - N-Channel MOSFET (CET)
CEP93A3/CEB93A3 N-Channel Enhancement Mode Field Effect Transistor FEATURES 30V, 150A, RDS(ON) = 3.0 mΩ @VGS = 10V. RDS(ON) = 6.0 mΩ @VGS = 4.5V. Su.

CEB95P04 - P-Channel MOSFET (CET)
CEP95P04/CEB95P04 P-Channel Enhancement Mode Field Effect Transistor PRELIMINARY FEATURES -40V, -93A, RDS(ON) =8.4mΩ @VGS = -10V. RDS(ON) =12mΩ @V.

CEB9N25 - N-Channel Enhancement Mode Field Effect Transistor (Chino-Excel Technology)
.

CEB01N6 - N-Channel MOSFET (CET)
CEP01N6/CEB01N6 CEI01N6/CEF01N6 N-Channel Enhancement Mode Field Effect Transistor FEATURES Type CEP01N6 CEB01N6 CEI01N6 CEF01N6 VDSS 650V 650V 650V 6.

CEB01N65 - N-Channel MOSFET (CET)
CEP01N65/CEB01N65 CEF01N65 N-Channel Enhancement Mode Field Effect Transistor PRELIMINARY FEATURES Type CEP01N65 CEB01N65 CEF01N65 VDSS 650V 650.

CEB01N6G - N-Channel MOSFET (CET)
CEP01N6G/CEB01N6G CEF01N6G N-Channel Enhancement Mode Field Effect Transistor FEATURES Type CEP01N6G CEB01N6G CEF01N6G VDSS 600V 600V 600V RDS(ON).

CEB02N6 - N-Channel MOSFET (CET)
CEP02N6/CEB02N6 4 ELECTRICAL CHARACTERISTICS (TC=25 C unless otherwise noted) Parameter DYNAMIC CHARACTERISTICS b Input Capacitance Output Capacitanc.