MINIATURE RELAY 2 POLES—1 to 2 A (FOR SIGNAL SW.
Toshiba Semiconductor
23
TA8205AH - 18W BTL x 2CH AUDIO POWER AMPLIFIER
TA8205AH / AL TOSHIBA Bipolar Linear Integrated Circuit Silicon Monolithic TA8205AH,TA8205AL 18W BTL × 2CH Audio Power Amplifier The thermal resistan.
Toshiba
13
TA8215H - 18W BTL x 3CH AUDIO POWER AMPLIFIER
TA8215H / L TOSHIBA Bipolar Linear Integrated Circuit Silicon Monolithic TA8215H,TA8215L 18W BTL x 2CH Audio Power Amplifier The thermal resistance θ.
Toshiba
6
TA8215HQ - 18W BTL x 2CH Audio Power Amplifier
TA8215HQ/LQ TOSHIBA Bipolar Linear Integrated Circuit Silicon Monolithic TA8215HQ,TA8215LQ 18W BTL × 2CH Audio Power Amplifier The thermal resistance.
JCET
4
B5818WS - SCHOTTKY BARRIER DIODE
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOD-323 Plastic-Encapsulate Diodes B5817WS-5819WS SCHOTTKY BARRIER DIODE FEATURES For use in low .
Toshiba
4
TA8215L - 18W BTL x 3CH AUDIO POWER AMPLIFIER
TA8215H / L TOSHIBA Bipolar Linear Integrated Circuit Silicon Monolithic TA8215H,TA8215L 18W BTL x 2CH Audio Power Amplifier The thermal resistance θ.
AiT Components
3
DS18W - SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER
AiT Components Inc. www.ait-components.com DS12W~DS120W SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER REVERSE VOLTAGE 20 TO 200V FORWARD CURRENT 1A DESCR.
Toshiba
3
TA8215LQ - 18W BTL x 2CH Audio Power Amplifier
TA8215HQ/LQ TOSHIBA Bipolar Linear Integrated Circuit Silicon Monolithic TA8215HQ,TA8215LQ 18W BTL × 2CH Audio Power Amplifier The thermal resistance.
JCET
3
B5818W - SCHOTTKY BARRIER DIODE
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOD-123 Plastic-Encapsulate Diodes B5817W-5819W SCHOTTKY BARRIER DIODE FEATURES For use in low vo.
GME
3
B5818WS - Schottky Barrier Diode
Production specification Schottky Barrier Diode FEATURES Extremely low VF . Low stored change,majority carrier conduction Low power loss/high e.
Rectron
3
B5818W - Schottky Barrier Diode
SOD-123 Plastic-Encapsulated Schottky Barrier Diode B5817W THRU B5819W Features High Current Capability Low Forward Voltage Drop P/N suffix V means .
Toshiba Semiconductor
3
TA8205AL - 18W BTL x 2CH AUDIO POWER AMPLIFIER
TA8205AH / AL TOSHIBA Bipolar Linear Integrated Circuit Silicon Monolithic TA8205AH,TA8205AL 18W BTL × 2CH Audio Power Amplifier The thermal resistan.
Fujitsu
3
BAL-18W-K - MINIATURE RELAY
MINIATURE RELAY 2 POLES—1 to 2 A (FOR SIGNAL SWITCHING) BA SERIES s FEATURES q q q q q q q q q Slim type relay for high density mounting CSA recog.
MCC
3
B5818W - Schottky Barrier Rectifier
MCC 5 Micro Commercial Components omponents 0DULOOD6WUHHW&KDWVZRUWK !"# $ % !"#.
Silicon Standard
3
B5818W - SCHOTTKY BARRIER DIODE
B5817W-B5819W SCHOTTKY BARRIER DIODE PRODUCT SUMMARY SOD-123 Plastic-Encapsulate Diode FEATURES For use in low voltage, high frequency inverters Free.
Kexin
2
1N5818W - Schottky Barrier Diodes
SMD Type Schottky Diodes 1N5817W ~ 1N5819W TransDisiotodress Ƶ Features ƽ Low power loss, high efficiency ƽ High current capability ƽ Low forward v.
SEMTECH
2
1N5818W - Surface Mount Schottky Barrier Rectifier
1N5817W THRU 1N5819W Surface Mount Schottky Barrier Rectifier Reverse Voltage - 20 to 40 V Forward Current - 1 A PINNING PIN 1 2 1 DESCRIP.
WillSEMI
2
WSB5518W - Schottky Barrier Diode
WSB5518W WSB5518W Middle Power Schottky Barrier Diode Features 0.5 A Average rectified forward current Low forward voltage, low leakage current .
LITE-ON
2
B5818WS - SURFACE MOUNT SCHOTTKY BARRIER DIODE
SURFACE MOUNT SCHOTTKY BARRIER DIODE B5817WS thru B5819WS REVERSE VOLTAGE – 20 to 40 Volts FORWARD CURRENT – 1 Ampere FEATURES • For use in low volt.
Rectron
2
B5818WS - Plastic-Encapsulate Schottky Barrier Diode
Plastic-Encapsulate Schottky Barrier Diode B5817WS THRU B5819WS Features ƹHigh Current Capability ƹLow Forward Voltage Drop Mechanical Data ƹSOD-32.
Rectron
2
DS18W - Surface Mount Schottky Barrier Rectifier
DS12W THRU DS120W SurfaceMount Schottky Barrier Rectifier ReverseVoltage- 20to200V ForwardCurrent - 1.0A Features • Metal silicon junction, majority.