BA-3W-K Datasheet | Specifications & PDF Download

TB2904HQ(o) TOSHIBA Bi-CMOS Digital Integrated Circuit Silicon Monolithic TB2904HQ (o) Maximum Power 43 W BTL × 4-ch Audio Power IC The TB2904H (o) i

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TA8263BH TOSHIBA Bipolar Linear Integrated Circuit Silicon Monolithic TA8263BH Max Power 43 W BTL × 4 ch Audio Power IC The TA8263BH is 4 ch BTL audi

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Chipkingdom Electronics www.DataSheet4U.net 3W CKE2009 CKE2009 BTL 。 5V 3Ω THD 10%、 3W 。 0.6µA。 CKE2009 ，。， (2.0V-5.5V)。 CKE2009 ，， 。 ： ■ 10

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www.DataSheet4U.com TB2906HQ TOSHIBA Bi-CMOS Digital Integrated Circuit Silicon Monolithic TB2906HQ Maximum Power 43 W BTL × 4-ch Audio Power IC The

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TOSHIBA Bipolar Linear Integrated Circuit Silicon Monolithic TA8272HQ Max Power 43 W BTL × 4 ch Audio Power IC The TA8272HQ is 4 ch BTL audio power a

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DATA SHEET N-CHANNEL GaAs MES FET NE6500379A 3W L, S-BAND POWER GaAs MESFET DESCRIPTION The NE6500379A is a 3W GaAs MESFET designed for middle powe

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BAR 64-03W Silicon PIN Diode l High voltage current controlled RF resistor for RF attenuator and swirches l Freqency range above 1 MHz l Low resista

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BAS 16-03W Silicon Switching Diode Preliminary data • For high-speed switching applications 2 1 VPS05176 Type BAS 16-03W Marking B Ordering Code

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BAT42W / BAT43W SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER Reverse Voltage - 30 Volts Forward Current - 0.2 Ampere FEATURES ● Plastic package has Under

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Production specification Schottky Barrier Diode BAT42W-BAT43W FEATURES z Low forward voltage. z Fast switching time. Pb Lead-free z Surface mount

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RECTRON SEMICONDUCTOR TECHNICAL SPECIFICATION SMALL SIGNAL DIODE VOLTAGE RANGE 30 Volts FEATURES * Low Forward Voltage Drop * Fast Switching Time * Su

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BAT42W / BAT43W 200mA Surface Mount Small Signal Diodes ■ Features ■ Outline 0.026 (0.65) 0.018 (0.45) • Low profile surface mounted application i

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SHENZHEN DONGKE SEMICONDUCTOR CO., LTD PSR Single-Stage APFC LED Driver IC-DK806 SPECIFICATION U 1. DESCRIPTION The DK806 is a single stage AC-DC tran

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www.DataSheet4U.com www.DataSheet4U.com www.DataSheet4U.com www.DataSheet4U.com

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Schottky Barrier Diode FEATURES z Low Forward drop voltage z Fast switching z Ultra-small surface mount package z Availadle in lead free version Pb L

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BAT15-03W Single silicon RF Schottky diode Product description This Infineon RF Schottky diode is a silicon low barrier N-type device with an integrat

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TC3W01F/FU 1 2008-06-03 TC3W01F/FU 2 2008-06-03 TC3W01F/FU 3 2008-06-03 TC3W01F/FU 4 2008-06-03 TC3W01F/FU 5 2008-06-03 TC3W01F/FU 6

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BAT14 Silicon Schottky Diode
DBS mixer applications up to 12 GHz
Low noise figure
Low barrier type BAT14-03W 1 2 ESD: Electrostatic disch

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Data Sheet SR43WZinc Silver Oxide Batteries Model System Nominal Voltage (V) Nominal Capacity (mAh)* Nominal Discharge Current (ȐA) Temperature Rang

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