BA-3W-K Datasheet | Specifications & PDF Download

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BA-3W-K MINIATURE RELAY

MINIATURE RELAY 2 POLES—1 to 2 A (FOR SIGNAL SW.

Toshiba Semiconductor

TB2904HQ - Maximum Power 43W BTL 4-ch Audio Power-IC

TB2904HQ(o) TOSHIBA Bi-CMOS Digital Integrated Circuit Silicon Monolithic TB2904HQ (o) Maximum Power 43 W BTL × 4-ch Audio Power IC The TB2904H (o) i.
Rating: 1 (5 votes)
Fujitsu

FLC103WG - C-Band Power GaAs FETs

www.DataSheet4U.com www.DataSheet4U.com www.DataSheet4U.com www.DataSheet4U.com .
Rating: 1 (5 votes)
Siemens Semiconductor Group

BAT14-03W - Silicon Schottky Diode

BAT 14-03W Silicon Schottky Diode • DBS mixer application to 12GHz • Medium barrier type • Low capacitance ESD: ElectroStatic Discharge sensitive dev.
Rating: 1 (4 votes)
Toshiba Semiconductor

TB2906HQ - Maximum Power 43W BTL x 4-ch Audio Power IC

www.DataSheet4U.com TB2906HQ TOSHIBA Bi-CMOS Digital Integrated Circuit Silicon Monolithic TB2906HQ Maximum Power 43 W BTL × 4-ch Audio Power IC The.
Rating: 1 (4 votes)
ETC

CKE2009 - Band off mode 3W Audio Power Amplifier

Chipkingdom Electronics www.DataSheet4U.net 3W CKE2009 CKE2009 BTL 。 5V 3Ω THD 10%、 3W 。 0.6µA。 CKE2009 ,。, (2.0V-5.5V)。 CKE2009 ,, 。 : ■ 10.
Rating: 1 (4 votes)
Globaltech

GSDSS23WF - Surface Mount Schottky Rectifiers

GSDSS22W Series Surface Mount Schottky Rectifiers Product Description Reverse Voltage 20V to 100V Forward Current 2.0A Packages Features „ Ideally s.
Rating: 1 (3 votes)
Toshiba

TC3W01F - 2-TO-3 LINE DECODER

TC3W01F/FU 1 2008-06-03 TC3W01F/FU 2 2008-06-03 TC3W01F/FU 3 2008-06-03 TC3W01F/FU 4 2008-06-03 TC3W01F/FU 5 2008-06-03 TC3W01F/FU 6 .
Rating: 1 (3 votes)
Will Semiconductor

WSB5503W - Middle Power Schottky Barrier Diode

WSB5503W Middle Power Schottky Barrier Diode Features  1A Average rectified forward current  Low forward voltage  Low leakage current  Small packa.
Rating: 1 (3 votes)
Toshiba

TC3W02F - 2-TO-3 LINE DECODER

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Rating: 1 (3 votes)
Toshiba

TC3W02FU - 2-TO-3 LINE DECODER

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Rating: 1 (3 votes)
Infineon Technologies AG

BAS21-03W - Silicon Switching Diode

Silicon Switching Diode • For high-speed switching applications • High breakdown voltage • Pb-free (RoHS compliant) package1) • Qualified according AE.
Rating: 1 (3 votes)
AiT Components

BAT43W - SCHOTTKY DIODES

AiT Components Inc. www.ait-components.com BAT42W~BAT43W SCHOTTKY DIODES DESCRIPTION The BAT42W~BAT43W is available in SOD-123 Package FEATURES  L.
Rating: 1 (3 votes)
KD

BAT43W - SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER

BAT42W / BAT43W SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER Reverse Voltage - 30 Volts Forward Current - 0.2 Ampere FEATURES ● Plastic package has Under.
Rating: 1 (3 votes)
Diodes

BAT43W - SURFACE MOUNT SCHOTTKY BARRIER DIODE

Features • Low Forward Voltage Drop • Fast Switching Time • Surface Mount Package Ideally Suited for Automated Insertion • Lead, Halogen and Antimony .
Rating: 1 (3 votes)
KYOCERA

TCG043WQLBAANN-GN00 - LCD

SPEC Spec No. TQ3C-8EAF0-E1DFF35-00 Date April 11, 2012 TYPE : TCG043WQLBAANN-GN00 < 4.3 inch WQVGA transmissive color TFT with LED backlight> CON.
Rating: 1 (3 votes)
Rohm

BA534 - 9V/2.3W single-channel power amplifier

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Rating: 1 (3 votes)
NEC

NE6500379 - 3W L / S-BAND POWER GaAs MESFET

DATA SHEET N-CHANNEL GaAs MES FET NE6500379A 3W L, S-BAND POWER GaAs MESFET DESCRIPTION The NE6500379A is a 3W GaAs MESFET designed for middle powe.
Rating: 1 (3 votes)
NEC

NE6500379A - 3W L / S-BAND POWER GaAs MESFET

DATA SHEET N-CHANNEL GaAs MES FET NE6500379A 3W L, S-BAND POWER GaAs MESFET DESCRIPTION The NE6500379A is a 3W GaAs MESFET designed for middle powe.
Rating: 1 (3 votes)
Futaba Electric

RFT3W - Non Inductive Resistors

NON INDUCTIVE RESISTORS RFT Series (RFT ) FEATURESFEA gCompact type with safety design of Non-flammability g and insulation. gUL1412 Recognized:3W、5.
Rating: 1 (3 votes)
Fujitsu

BALD3WK - MINIATURE RELAY

MINIATURE RELAY 2 POLES—1 to 2 A (FOR SIGNAL SWITCHING) BA SERIES s FEATURES q q q q q q q q q Slim type relay for high density mounting CSA recog.
Rating: 1 (3 votes)
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