BAS31-Q Datasheet | Specifications & PDF Download

DISCRETE SEMICONDUCTORS DATA SHEET dbook, halfpage M3D049 BAS316 High-speed diode Product specification Supersedes data of 1998 Jan 08 1998 Mar 26 P

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BAS31 Discrete POWER & Signal Technologies BAS31 CONNECTION DIAGRAM 3 3 3 L21 2 1 2 1 2 SOT-23 1 High Voltage General Purpose Diode Sourced fr

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BAS16 series High-speed switching diodes Rev. 6 — 24 September 2014 Product data sheet 1. Product profile 1.1 General description High-speed switch

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Small Signal Product BAS316 Taiwan Semiconductor 200mW High Voltage SMD Switching Diode FEATURES - Fast switching device (trr<4.0ns) - Surface mount

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BAS316WS High Speed Switching Diode Applications • High-speed switching Absolute Maximum Ratings (Ta = 25 OC) Parameter Repetitive Peak Reverse Voltag

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BAS31-Q General purpose switching diode 6 May 2025 Product data sheet 1. General description General purpose switching diode, encapsulated in a smal

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BAS29, BAS31, BAS35 Silicon Epitaxial Planar Switching Diodes BAS29 3 BAS31 3 BAS35 3 12 12 12 BAS29 Marking Code: L20 BAS31 Marking Code: L21

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BAS316 High-speed switching diode 1 July 2022 Product data sheet 1. General description High-speed switching diode, encapsulated in a small SOD323 (

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UNISONIC TECHNOLOGIES CO., LTD BAS316 Preliminary HIGH-SPEED DIODE  DESCRIPTION The UTC BAS316 is high-speed diode, it uses UTC’s advanced techno

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SMD Type High-Speed Diode KAS316(BAS316) Features Very small plastic SMD package High switching speed: max. 4 ns Continuous reverse voltage:max. 75

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Features ■ Small plastic SMD package ■ High switching speed: max.4ns ■ Continuous reverse voltage: max.100V ■ Repetitive peak reverse voltage: max.100

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Silicon Epitaxial Planar Diode FEATURES  Very small plastic SMD package  High switching speed:max.4ns Pb Lead-free  Continuous reverse voltage:m

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DISCRETE SEMICONDUCTORS DATA SHEET dbook, halfpage M3D088 BAS29; BAS31; BAS35 General purpose controlled avalanche (double) diodes Product data sheet

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BAS31, BAS35 BAS31, BAS35 SMD Small Signal Diodes SMD Kleinsignal-Dioden IFAV VF1 Tjmax = 200 mA < 0.750 V = 150°C VRRM IFSM1 trr = 120 V =2A < 5

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Certificate TH97/10561QM Certificate TW00/17276EM BAS316 PRV : 100 Volts Io : 250 mA HIGH SPEED DIODE SOD-323 1.80 1.60 0.40 0.25 1.35 1.15 FEAT

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Small Signal Product BAS316WS Taiwan Semiconductor 200mW High-Speed Switching SMD Diode FEATURES - Fast switching device (trr<4.0ns) - Surface mount

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DATA SHEET www.onsemi.com Small Signal Diode 3 BAS31 ABSOLUTE MAXIMUM RATINGS (TA = 25°C, unless otherwise noted) (Note 1, 2) Symbol Parameter

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LESHAN RADIO COMPANY, LTD. High-speed diode DESCRIPTION The LBAS316T1 is a high-speed switching diode fabricated in planar technology, and encapsulat

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Features • Surface Mount Package Ideally Suited for Automatic Insertion • Moisture Sensitivity Level 1 • Epoxy Meets UL 94 V-0 Flammability Rating • H

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BAS316 Rev.F Mar.-2016 / Descriptions SOD-323  。 Silicon Diode in a SOD-323 Plastic Package. / Features 。 Small signal diode . / Applications 。

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