BC3 Datasheet | Specifications & PDF Download

BC327/328 BC327/328 Switching and Amplifier Applications • Suitable for AF-Driver stages and low power output stages • Complement to BC337/BC338 TO-9

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BC337-25 ® BC337-40 Type BC337-25 BC337-40 SMALL SIGNAL NPN TRANSISTORS PRELIMINARY DATA Marking BC337-25 BC337-40 s SILICON EPITAXIAL PLANAR NPN

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BC327, BC327-16, BC327-25, BC327-40 Amplifier Transistors PNP Silicon Features • These are Pb−Free Devices* MAXIMUM RATINGS Rating Collector −Emitte

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Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN SILICON PLANAR EPITAXIAL TRANSISTOR BC317/A/B TO-92 Pl

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PD- 91889A SMPS MOSFET IRFBC30A HEXFET® Power MOSFET www.DataSheet4U.com Applications Switch Mode Power Supply (SMPS) l Uninterruptable Power Supp

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MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by BC337/D Amplifier Transistors NPN Silicon COLLECTOR 1 BC337,-16,-25,-40 BC338,-16,-25

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BC337 / BC338 — NPN Epitaxial Silicon Transistor September 2015 BC337 / BC338 NPN Epitaxial Silicon Transistor Features • Switching and Amplifier A

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PD -91595A IRG4BC30KD INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • High short circuit rating optimized for motor c

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BC337.25 Bipolar Transistors General Description: Silicon Planar Epitaxial Transistors. General Purpose Transistors Best Suited for use in Driver and

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Datasheet RL78/G22 RENESAS MCU R01DS0424EJ0110 Rev.1.10 Jun 12, 2024 True low-power platform, 37.5-µA/MHz operating current, 200-nA stop current, 3

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Datasheet RL78/G22 RENESAS MCU R01DS0424EJ0110 Rev.1.10 Jun 12, 2024 True low-power platform, 37.5-µA/MHz operating current, 200-nA stop current, 3

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SEMICONDUCTOR TECHNICAL DATA GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURES High Current : IC=800mA. DC Current Gain : hFE=100 630 (VCE=

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PD 91453B IRG4BC30UD INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • UltraFast: Optimized for high operating frequenc

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PD- 91751A IRG4IBC30FD INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • • • • Very Low 1.59V votage drop 2.5kV, 60s in

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www.DataSheet4U.com ISSUED DATE :2005/10/21 REVISED DATE : GBC337 Description Features NPN SILICON TRANSISTOR The GBC337 is designed for drive and

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Embedded Power for Business-Critical Continuity IBC32 Eighth-Brick Series Fixed Ratio 2nd Generation IBC Total Power: 300W Input Voltage: 38 - 55 Vdc

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Features • 32-Mbit Flash and 4-Mbit/8-Mbit PSRAM • Single 66-ball (8 mm x 10 mm x 1.2 mm) CBGA Package • 2.7V to 3.3V Operating Voltage www.DataSheet

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www.DataSheet.co.kr TFT COLOR LCD MODULE NL8060BC31-17E 30.8cm (12.1 Type) SVGA DATA SHEET (2nd edition) All information is subject to change witho

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Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SILICON PLANAR EPITAXIAL TRANSISTORS BC 307, A, B, C BC 30

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