BC328 Datasheet | Specifications & PDF Download

BC327/328 BC327/328 Switching and Amplifier Applications • Suitable for AF-Driver stages and low power output stages • Complement to BC337/BC338 TO-9

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www.DataSheet4U.com ISSUED DATE :2005/10/21 REVISED DATE : GBC328 Description Features PNP SILICON TRANSISTOR The GBC328 is designed for drive and

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PNP Silicon AF Transistors q High current gain q High collector current q Low collector-emitter saturation voltage q Complementary types: BC 337, BC 3

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SEMICONDUCTOR TECHNICAL DATA GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURES High Current : IC=-800mA. DC Current Gain : hFE=100 630 (VCE

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MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by BC327/D Amplifier Transistors PNP Silicon COLLECTOR 1 BC327,-16,-25 BC328,-16,-25 2

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PNP Silicon AF Transistors q High current gain q High collector current q Low collector-emitter saturation voltage q Complementary types: BC 337, BC 3

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PNP Silicon AF Transistors BC 327 BC 328 High current gain q High collector current q Low collector-emitter saturation voltage q Complementary types

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PNP Silicon AF Transistors BC 327 BC 328 High current gain q High collector current q Low collector-emitter saturation voltage q Complementary types

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MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by BC327/D Amplifier Transistors PNP Silicon COLLECTOR 1 BC327,-16,-25 BC328,-16,-25 2

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PNP Silicon AF Transistors BC 327 BC 328 High current gain q High collector current q Low collector-emitter saturation voltage q Complementary types

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MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by BC327/D Amplifier Transistors PNP Silicon COLLECTOR 1 BC327,-16,-25 BC328,-16,-25 2

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www.DataSheet4U.com Continental Device India Limited An IS/ISO 9002 and IECQ Certified Manufacturer IS/ISO 9002 Lic# QSC/L- 000019.2 IS / IECQC 700

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BC327 BC328 BC327 BC328 General Purpose PNP Transistors Universal-PNP-Transistoren IC = 800 mA hFE ~ 160/250/400 Tjmax = 150°C VCEO = 25 ..

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PNP Silicon AF Transistors q High current gain q High collector current q Low collector-emitter saturation voltage q Complementary types: BC 337, BC 3

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BC 327 / BC 328 PNP Si-Epitaxial PlanarTransistors General Purpose Transistors PNP 625 mW TO-92 (10D3) 0.18 g Power dissipation – Verlustleistung Pl

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Semiconductor SBC328 PNP Silicon Transistor Descriptions • High current application • Switching application Features • Suitable for AF-Driver stage

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: SILICON PNP EPITAXIAL TYPE (PCT PROCESS) TBC327 TBC328 PRIMARILY INTENDED FOR USE IN DRIVER AND OUTPUT STAGE OF AUDIO AMPLIFIERS. NPN COMPLEMENTS

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BC327, BC328 Small Signal Transistors (PNP) TO-92 .181 (4.6) .142 (3.6) min..492 (12.5) .181 (4.6) max.∅ .022 (0.55) .098 (2.5) CE B Dimensions in

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Elektronische Bauelemente BC327 / BC328 PNP Plastic-Encapsulate Transistor FEATURE Power Dissipation RoHS Compliant Product A suffix of “-C” specif

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