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TBC328 - Silicon PNP Transistor

Download the TBC328 datasheet PDF. This datasheet also covers the TBC327 variant, as both devices belong to the same silicon pnp transistor family and are provided as variant models within a single manufacturer datasheet.

Key Features

  • . High V C EO : -45V (TBC327) -25V (TBC328) . Low Saturation Voltage : VC E(sat)=-0.7V (Max. ) at Ic=-500mA.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (TBC327-Toshiba.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number TBC328
Manufacturer Toshiba
File Size 35.51 KB
Description Silicon PNP Transistor
Datasheet download datasheet TBC328 Datasheet

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Other Datasheets by Toshiba

Part Number Description
TBC327 Silicon PNP Transistor
TBC337 Silicon NPN Transistor
TBC338 Silicon NPN Transistor
TBC546 Silicon NPN Transistor
TBC547 Silicon NPN Transistor

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
: SILICON PNP EPITAXIAL TYPE (PCT PROCESS) TBC327 TBC328 PRIMARILY INTENDED FOR USE IN DRIVER AND OUTPUT STAGE OF AUDIO AMPLIFIERS. NPN COMPLEMENTS ARE TBC337 AND TBC338. Unit in mm FEATURES . High V C EO : -45V (TBC327) -25V (TBC328) . Low Saturation Voltage : VC E(sat)=-0.7V (Max.) at Ic=-500mA MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC SYMBOL Collector-Base Breakdown Voltage TBC327 v (BR)CBO TBC328 Collector-Emitter Breakdown Voltage TBC327 v (BR) CEO TBC328 Emitter-Base Breakdown Voltage v (BR)EBO Collector Current DC ic Peak ICP Base Current (DC) IB Collector Power Dissipation PC Junction Temperature Storage Temperature Range Lstg RATING -50 -30 -45 -25 -500 -1000 -100 625 150 -65-150 UNIT mA mA mW 1. COLLECTOR 2. EASE 3. EMITTER EI A J Weight : 0.