TBC327 - Silicon PNP Transistor

Toshiba

Key Features

. High V C EO : -45V (TBC327) -25V (TBC328) . Low Saturation Voltage : VC E(sat)=-0.7V (Max. ) at Ic=-500mA.

TBC327 silicon pnp transistor by Toshiba - Datasheet Preview

Datasheet Details

Part number	TBC327
Manufacturer	Toshiba
File Size	35.51 KB
Description	Silicon PNP Transistor
Datasheet	TBC327 Datasheet

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Other Datasheets by Toshiba

Part Number	Description
TBC328	Silicon PNP Transistor
TBC337	Silicon NPN Transistor
TBC338	Silicon NPN Transistor
TBC546	Silicon NPN Transistor
TBC547	Silicon NPN Transistor

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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: SILICON PNP EPITAXIAL TYPE (PCT PROCESS) TBC327 TBC328 PRIMARILY INTENDED FOR USE IN DRIVER AND OUTPUT STAGE OF AUDIO AMPLIFIERS. NPN COMPLEMENTS ARE TBC337 AND TBC338. Unit in mm FEATURES . High V C EO : -45V (TBC327) -25V (TBC328) . Low Saturation Voltage : VC E(sat)=-0.7V (Max.) at Ic=-500mA MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC SYMBOL Collector-Base Breakdown Voltage TBC327 v (BR)CBO TBC328 Collector-Emitter Breakdown Voltage TBC327 v (BR) CEO TBC328 Emitter-Base Breakdown Voltage v (BR)EBO Collector Current DC ic Peak ICP Base Current (DC) IB Collector Power Dissipation PC Junction Temperature Storage Temperature Range Lstg RATING -50 -30 -45 -25 -500 -1000 -100 625 150 -65-150 UNIT mA mA mW 1. COLLECTOR 2. EASE 3. EMITTER EI A J Weight : 0.