. High V C EO : 45V (TBC337)
25V (TBC338) . Low Saturation Voltage
: V CE ( sat )=0.7V
(Max. )
at I C =500mA
Unit in mm
'
r^
<
„H 4n o.4 5 z
55 MAX. a
|
J
00
00 r-
C.4 5
r-i.
The following content is an automatically extracted verbatim text
from the original manufacturer datasheet and is provided for reference purposes only.
View original datasheet text
:
TBC337 TBC338
SILICON NPN EPITAXIAL TYPE (PCT PROCESS)
PRIMARILY INTENDED FOR USE IN DRIVER AND OUTPUT STAGE OF AUDIO AMPLIFIERS. PNP COMPLEMENTS ARE TBC327 AND TBC328.
FEATURES . High V C EO : 45V (TBC337)
25V (TBC338) . Low Saturation Voltage
: V CE ( sat )=0.7V
(Max.)
at I C =500mA
Unit in mm
'
r^
<
„H 4n o.4 5 z
55 MAX.
a
|
J
00
00 r-
C.
TBC337 Datasheet
