BC817-40W Datasheet | Specifications & PDF Download

BC817W, BC818W NPN Silicon AF Transistors
For general AF applications
High collector current
High current gain
Low collector-emitter saturatio

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Production specification NPN general purpose transistor FEATURES z High collector current. z High current gain. Pb Lead-free z Low collector-emitt

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Features • Ideally Suited for Automatic Insertion • Epitaxial Planar Die Construction • Complementary PNP Types: BC807-xxW • For switching and AF Ampl

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BC817W BC818W BC817W BC818W SMD General Purpose NPN Transistors SMD Universal-NPN-Transistoren IC = 500 mA hFE ~ 180/290/520 Tjmax = 150°C

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LESHAN RADIO COMPANY, LTD. General Purpose Transistors NPN Silicon • We declare that the material of product compliance with RoHS requirements. • S-

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BC817-16W-AU SERIES NPN GENERAL PURPOSE TRANSISTORS VOLTAGE 45 Volts POWER 300 mW FEATURES • General purpose amplifier applications • NPN epitax

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DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D102 BC817W NPN general purpose transistor Product specification Supersedes data of 1997 Mar 05

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NPN Silicon AF Transistor • For general AF applications • High collector current • High current gain • Low collector-emitter saturation voltage • Pb-f

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Small Signal Product BC817-16W/25W/40W Taiwan Semiconductor 200mW, PNP Small Signal Transistor FEATURES - Epitaxial planar die construction - Surfac

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45 V, 0.5 A, General Purpose NPN Transistor BC817-40W onsemi’s BC817−40W is a General Purpose NPN Transistor that is housed in the SC−70/SOT−323 pack

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BC817W / BC818W NPN Silicon Epitaxial Planar Transistors for general purpose and switching applications These transistors are subdivided into three gr

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Elektronische Bauelemente BC817 -16W, -25W, -40W 500 mA, 50 V NPN Plastic Encapsulate Transistor RoHS Compliant Product A suffix of “-C” specifies h

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