BC846 / BC847 / BC848 / BC850 — NPN Epitaxial Si.
Fairchild Semiconductor
BC846B - NPN General Purpose Amplifier
BC846 / BC847 / BC848 / BC850 — NPN Epitaxial Silicon Transistor August 2015 BC846 / BC847 / BC848 / BC850 NPN Epitaxial Silicon Transistor Features.
ON Semiconductor
BC846BPDW1 - Dual General Purpose Transistors
DATA SHEET www.onsemi.com Dual General Purpose Transistors NPN/PNP Duals (Complementary) BC846BPDW1, BC847BPDW1, BC848CPDW1 Series These transistors .
Leshan Radio Company
LBC846BWT3G - General Purpose Transistors
LESHAN RADIO COMPANY, LTD. General Purpose Transistors NPN Silicon • Moisture Sensitivity Level: 1 • ESD Rating – Human Body Model: >4000 V ESD Rati.
Leshan Radio Company
LBC846BWT1G - General Purpose Transistors
LESHAN RADIO COMPANY, LTD. General Purpose Transistors NPN Silicon We declare that the material of product compliance with RoHS requirements. S- Pre.
Motorola Inc
BC846BWT1 - General Purpose Transistors
MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by BC846AWT1/D General Purpose Transistors NPN Silicon These transistors are designed for.
ON Semiconductor
SBC846BDW1T1G - Dual General Purpose Transistors
BC846BDW1T1G, SBC846BDW1T1G, BC847BDW1T1G, SBC847BDW1T1G Series, NSVBC847BDW1T2G, BC848CDW1T1G Dual General Purpose Transistors NPN Duals These trans.
Leshan Radio Company
LBC846BLT1G - General Purpose Transistors
LESHAN RADIO COMPANY, LTD. General Purpose Transistors NPN Silicon • Moisture Sensitivity Level: 1 • ESD Rating – Human Body Model: >4000 V ESD Ratin.
Leshan Radio Company
LBC846BLT3G - General Purpose Transistors
LESHAN RADIO COMPANY, LTD. General Purpose Transistors NPN Silicon • Moisture Sensitivity Level: 1 • ESD Rating – Human Body Model: >4000 V ESD Ratin.
Leshan Radio Company
LBC846BLT1G - General Purpose Transistors
LESHAN RADIO COMPANY, LTD. General Purpose Transistors NPN Silicon • Moisture Sensitivity Level: 1 • ESD Rating – Human Body Model: >4000 V ESD Ratin.
Leshan Radio Company
LBC846BDW1T1G - Dual-Channel Transistor
LESHAN RADIO COMPANY, LTD. Dual General Purpose Transistors NPN Duals These transistors are designed for general purpose amplifier applications. The.
Leshan Radio Company
LBC846BPDW1T1G - Dual-Channel Transistor
LESHAN RADIO COMPANY, LTD. Dual General Purpose Transistors NPN/PNP Duals (Complimentary) These transistors are designed for general purpose amplifie.
AiT Semiconductor
BC846BPDW - NPN/PNP DUAL TRANSISTOR
AiT Semiconductor Inc. www.ait-ic.com BC846BPDW~BC848CPDW GENERAL PURPOSE TRANSISTOR NPN/PNP DUAL (COMPLIMENTARY) DESCRIPTION FEATURES These trans.
NXP
BC846BMB - 100mA NPN Transistor
SOT883B BC846BMB 65 V, 100 mA NPN general-purpose transistor Rev. 1 — 15 May 2012 Product data sheet 1. Product profile 1.1 General description .
ETL
BC846BDW1T1 - Dual General Purpose Transistors
Dual General Purpose Transistors NPN Duals These transistors are designed for general purpose amplifier applications. They are housed in the SOT–363/.
ON Semiconductor
BC846BDW1 - Dual General Purpose Transistors
Dual General Purpose Transistors NPN Duals BC846BDW1, BC847BDW1, BC848CDW1 These transistors are designed for general purpose amplifier applications. .
Micro Commercial Components
BC846B - NPN Transistor
BC846A THRU BC849C Features • Halogen Free. “Green” Device (Note 1) • Moisture Sensitivity Level 1 • Epoxy Meets UL 94 V-0 Flammability Rating • Lead.
GME
BC846B - NPN Transistor
Production specification NPN general purpose Transistor FEATURES High current gain. Excellent hFE linearity . Pb Lead-free Low noise between.
ON Semiconductor
BC846B - General Purpose Transistors
BC846, BC847, BC848 General Purpose Transistors NPN Silicon These transistors are designed for general purpose amplifier applications. They are hous.
Motorola Inc
BC846BLT1 - General Purpose Transistors
MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by BC846ALT1/D General Purpose Transistors NPN Silicon COLLECTOR 3 1 BASE MAXIMUM RATI.
Infineon Technologies AG
BC846BT - NPN Silicon AF Transistors
BC846T...BC850T NPN Silicon AF Transistors For AF input stages and driver applications High current gain Low collector-emitter saturation volta.
