MITSUBISHI SEMICONDUCTOR 〈TRIAC〉 BCR8PM MEDIU.
Mitsubishi Electric Semiconductor
BCR8PM-18 - Triac
MITSUBISHI SEMICONDUCTOR 〈TRIAC〉 BCR8PM-18 MEDIUM POWER USE INSULATED TYPE, PLANAR PASSIVATION TYPE BCR8PM-18 OUTLINE DRAWING Dimensions in mm 10.
Renesas Technology
BCR8PM-12LG - Triac
BCR8PM-12LG Triac Medium Power Use Features IT (RMS) : 8 A VDRM : 600 V IFGTI, IRGTI, IRGT III : 30 mA Viso : 2000 V Outline RENESAS Package c.
Renesas Technology
BCR8PM-12LE - Triac
BCR8PM-12LE 600V – 8A - Triac Medium Power Use Features • IT (RMS) : 8 A • VDRM : 600 V • IFGTI, IRGTI, IRGT III : 30 mA • Viso : 1500 V Outline RENES.
Renesas Technology
BCR8PM-14L - Triac
BCR8PM-14L Triac Medium Power Use REJ03G0308-0100 Rev.1.00 Aug.20.2004 Features • IT (RMS) : 8 A • VDRM : 700 V www.DataSheet4U.com • IFGTI, IRGTI, I.
INCHANGE
BCR8PM-12LG - Thyristor
isc Thyristors INCHANGE Semiconductor BCR8PM-12LG DESCRIPTION ·With TO-220F packaging ·Operating in 3 quadrants ·High commutation capability ·Minimu.
Mitsubishi Electric Semiconductor
BCR8PM - Triac
MITSUBISHI SEMICONDUCTOR 〈TRIAC〉 BCR8PM MEDIUM POWER USE INSULATED TYPE, PLANAR PASSIVATION TYPE BCR8PM OUTLINE DRAWING 10.5 MAX 5.2 Dimensions in.
Powerex Power Semiconductors
BCR8PM - Triac
BCR8PM Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (412) 925-7272 Triac 8 Amperes/400-600 Volts OUTLINE DRAWING C 5.2 1.2.
Mitsubishi Electric Semiconductor
BCR8PM-14 - Triac
MITSUBISHI SEMICONDUCTOR 〈TRIAC〉 BCR8PM-14 MEDIUM POWER USE INSULATED TYPE, PLANAR PASSIVATION TYPE BCR8PM-14 OUTLINE DRAWING Dimensions in mm 10.
Mitsubishi Electric Semiconductor
BCR8PM-20 - Triac
MITSUBISHI SEMICONDUCTOR 〈TRIAC〉 BCR8PM-20 MEDIUM POWER USE INSULATED TYPE, PLANAR PASSIVATION TYPE BCR8PM-20 OUTLINE DRAWING Dimensions in mm 10.
Renesas Technology
BCR8PM-12L - Triac
BCR8PM-12L Triac Medium Power Use (The product guaranteed maximum junction temperature of 150°C) REJ03G0461-0200 Rev.2.00 Nov.08.2004 Features T (RMS.
Renesas Technology
BCR8PM-12LD - Triac
BCR8PM-12LD Triac Medium Power Use Features IT (RMS) : 8 A VDRM : 600 V IFGTI , IRGTI, IRGT III : 50 mA Viso : 2000 V Outline RENESAS Package .
Renesas Technology
BCR8PM-14LD - Triac
BCR8PM-14LD Triac Medium Power Use Features IT (RMS) : 8 A VDRM : 700 V IFGTI , IRGTI, IRGT III : 50 mA Viso : 2000 V Outline RENESAS Package .
Renesas Technology
BCR8PM-14LE - Triac
BCR8PM-14LE 700V – 8A - Triac Medium Power Use Features • IT (RMS) : 8 A • VDRM : 700 V • IFGTI, IRGTI, IRGTIII : 30 mA • Viso : 1500 V Outline RENESA.
Renesas Technology
BCR8PM-14LG - Triac
BCR8PM-14LG Triac Medium Power Use Features IT (RMS) : 8 A VDRM : 800 V (Tj = 125C) IFGTI, IRGTI, IRGT III : 30 mA Viso : 2000 V Outline RENE.
Renesas Technology
BCR8PM-16L - Triac
BCR8PM-16L Triac Medium Power Use REJ03G0310-0100 Rev.1.00 Aug.20.2004 Features • IT (RMS) : 8 A • VDRM : 800 V www.DataSheet4U.com • IFGTI, IRGTI, I.
Renesas Technology
BCR8PM-16LG - Triac
BCR8PM-16LG Triac Medium Power Use Features IT (RMS) : 8 A VDRM : 800 V IFGTI, IRGTI, IRGT III : 30 mA Viso : 2000 V Outline RENESAS Package c.
Renesas Technology
BCR8PM-20L - Triac
BCR8PM-20L Triac Medium Power Use REJ03G0311-0100 Rev.1.00 Aug.20.2004 Features • IT (RMS) : 8 A • VDRM : 1000 V www.DataSheet4U.com • IFGTI, IRGTI, .
INCHANGE
BCR8PM-14LG - Thyristor
isc Thyristors INCHANGE Semiconductor BCR8PM-14LG DESCRIPTION ·With TO-220F packaging ·Operating in 3 quadrants ·High commutation capability ·Minimu.
INCHANGE
BCR8PM-14L - Thyristor
isc Thyristors INCHANGE Semiconductor BCR8PM-14L DESCRIPTION ·With TO-220F packaging ·Operating in 3 quadrants ·High commutation capability ·Minimum.
INCHANGE
BCR8PM14L - Thyristor
isc Triacs BCR8PM14L FEATURES ·With TO-220F package ·Glass passivated triacs in a plastic envelope, for use in Applications requiring high bidirecti.