BD135-6 Datasheet | Specifications & PDF Download

BD135 / 137 / 139 — NPN Epitaxial Silicon Transistor BD135 / 137 / 139 NPN Epitaxial Silicon Transistor August 2013 Features • Complement to BD136,

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BD135 - BD136 BD139 - BD140 Complementary low voltage transistor Features ■ Products are pre-selected in DC current gain Application ■ General purpos

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BD135 / 137 / 139 — NPN Epitaxial Silicon Transistor BD135 / 137 / 139 NPN Epitaxial Silicon Transistor Features • Complement to BD136, BD138 and BD

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SILICON NPN EPITAXIAL TYPE (PCT PROCESS) BD135 BD137 BD1 39I MEDIUM POWER AMPLIFIER APPLICATIONS. FEATURES . Designed for Complementary Use with BD1

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isc Silicon NPN Power Transistor BD135 DESCRIPTION ·DC Current Gain- : hFE= 40(Min)@ IC= 0.15A ·Collector-Emitter Sustaining Voltage - : VCEO(SUS)=

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BD135 / 137 / 139 — NPN Epitaxial Silicon Transistor BD135 / 137 / 139 NPN Epitaxial Silicon Transistor Features • Complement to BD136, BD138 and BD

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Plastic Medium-Power Silicon NPN Transistors BD135G, BD137G, BD139G This series of plastic, medium−power silicon NPN transistors are designed for use

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BD135 / 137 / 139 — NPN Epitaxial Silicon Transistor BD135 / 137 / 139 NPN Epitaxial Silicon Transistor Features • Complement to BD136, BD138 and BD

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BD135 / 137 / 139 — NPN Epitaxial Silicon Transistor BD135 / 137 / 139 NPN Epitaxial Silicon Transistor Features • Complement to BD136, BD138 and BD

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BD135G, BD137G, BD139G Plastic Medium-Power Silicon NPN Transistors This series of plastic, medium−power silicon NPN transistors are designed for use

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UNISONIC TECHNOLOGIES CO., LTD BD135 Preliminary NPN EPITAXIAL SILICON TRANSISTOR NPN EPITAXIAL TRANSISTOR  DESCRIPTION The UTC BD135 is an NPN

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