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BD135 Silicon NPN Transistor

BD135 Description

SILICON NPN EPITAXIAL TYPE (PCT PROCESS) BD135 BD137 BD1 39I MEDIUM POWER AMPLIFIER APPLICATIONS..

BD135 Features

* . Designed for Complementary Use with BD136, BD138 and BD140. 7.9MAX. Unit in mm MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC Collector-Base Voltage BD135 BD137 BD139 Collector-Emitter Voltage BD135 BD137 BD139 Emitter-Base Voltage Collector Current DC Peak Collector Power Dissipation Ta=25

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Datasheet Details

Part number
BD135
Manufacturer
Toshiba ↗
File Size
101.44 KB
Datasheet
BD135-Toshiba.pdf
Description
Silicon NPN Transistor

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Silicon NPN Transistor Toshiba
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