Datasheet4U Logo Datasheet4U.com

BD137, BD135 Silicon NPN Transistor

BD137 Description

SILICON NPN EPITAXIAL TYPE (PCT PROCESS) BD135 BD137 BD1 39I MEDIUM POWER AMPLIFIER APPLICATIONS..

BD137 Features

* . Designed for Complementary Use with BD136, BD138 and BD140. 7.9MAX. Unit in mm MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC Collector-Base Voltage BD135 BD137 BD139 Collector-Emitter Voltage BD135 BD137 BD139 Emitter-Base Voltage Collector Current DC Peak Collector Power Dissipation Ta=25

📥 Download Datasheet

This datasheet PDF includes multiple part numbers: BD137, BD135. Please refer to the document for exact specifications by model.
datasheet Preview Page 2 datasheet Preview Page 3

Datasheet Details

Part number
BD137, BD135
Manufacturer
Toshiba ↗
File Size
101.44 KB
Datasheet
BD135-Toshiba.pdf
Description
Silicon NPN Transistor
Note
This datasheet PDF includes multiple part numbers: BD137, BD135.
Please refer to the document for exact specifications by model.

📁 Related Datasheet

  • BD137-10 - NPN Epitaxial Silicon Transistor (ON Semiconductor)
  • BD137-16 - NPN Epitaxial Silicon Transistor (ON Semiconductor)
  • BD13710STU - NPN Epitaxial Silicon Transistor (Fairchild Semiconductor)
  • BD13716S - NPN Epitaxial Silicon Transistor (Fairchild Semiconductor)
  • BD13716STU - NPN Epitaxial Silicon Transistor (Fairchild Semiconductor)
  • BD137G - Plastic Medium-Power Silicon NPN Transistors (ON Semiconductor)
  • BD130 - NPN Silicon Transistor (Comset Semiconductors)
  • BD13003B - NPN Plastic Encapsulated Transistor (SeCoS)

📌 All Tags

Toshiba BD137-like datasheet