• Part: BD139
  • Description: Silicon NPN Transistor
  • Category: Transistor
  • Manufacturer: Toshiba
  • Size: 101.44 KB
Download BD139 Datasheet PDF
Toshiba
BD139
FEATURES . Designed for plementary Use with BD136, BD138 and BD140. 7.9MAX. Unit in mm MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC Collector-Base Voltage BD135 BD137 BD139 Collector-Emitter Voltage BD135 BD137 BD139 Emitter-Base Voltage Collector Current DC Peak Collector Power Dissipation Ta=25 C Tc^60 C Junction Temperature Storage Temperature Range SYMBOL VCBO v CEO Vebo I CM RATING 45 60 80 45 60 80 0.5 1.5 PC L stg 6.5 150 -55-150 UNIT 1. EMITTER Z. COLLECTOR (HEAT S INK) Z. BASE TO- 126 TOSHIBA 2-8P1A Weight : 0.72g ELECTRICAL CHARACTERISTICS (Ta=25 C) CHARACTERISTIC SYMBOL TEST CONDITION Collector Cut-off Current ICBO V CB=30V, I E=0 Vcb=30V, l E=0, Ta=125°C Emitter Cut-off Current l EBO VEB=5V, I C =0 Collector-Emitter Breakdown Voltage BD135 BD137 V(BR)CE0 IC=30m A, Ib=0 DC Current...