BD130 Datasheet, transistor equivalent, Comset Semiconductors

PDF File Details

Part number:

BD130

Manufacturer:

Comset Semiconductors

File Size:

167.82kb

Download:

📄 Datasheet

Description:

Npn silicon transistor.

Datasheet Preview: BD130 📥 Download PDF (167.82kb)
Page 2 of BD130 Page 3 of BD130

BD130 Application

  • Applications The BD130 is a silicon epitaxial-base NPN transistor in JEDEC TO3 metal case. It is intended for power switching circuits, series and s

TAGS

BD130
NPN
Silicon
Transistor
Comset Semiconductors

📁 Related Datasheet

BD130 - NPN Silicon Power (Solitron Devices)
w w a D . w S a t e e h U 4 t m o .c w w .D w t a S a e h U 4 t e .c m o w w w .D a S a t e e h U 4 t m o .c .

BD13003B - NPN Plastic Encapsulated Transistor (SeCoS)
Elektronische Bauelemente BD13003B 1.5A, 700V NPN Plastic-Encapsulated Transistor RoHS Compliant Product A suffix of “-C” specifies halogen & lead-f.

BD131 - NPN Transistor (INCHANGE)
isc Silicon NPN Power Transistor INCHANGE Semiconductor BD131 DESCRIPTION ·DC Current Gain- : hFE= 40(Min)@ IC= 0.5A ·Collector-Emitter Breakdown Vo.

BD131 - NPN power transistor (NXP)
DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D100 BD131 NPN power transistor Product specification Supersedes data of 1997 Mar 04 1999 Apr 12.

BD131 - SILICON PLANAR EPITAXIAL POWER TRANSISTORS (Comset Semiconductors)
NPN BD131 SILICON PLANAR EPITAXIAL POWER TRANSISTORS The BD131are NPN transistors mounted in Jedec TO-126 plastic package. Medium power applications. .

BD132 - SILICON POWER TRANSISTOR (SavantIC)
SavantIC Semiconductor Product Specification Silicon PNP Power Transistors BD132 .. DESCRIPTION ·Complement to type BD131 ·With .

BD132 - SILICON PLANAR EPITAXIAL POWER TRANSISTORS (Comset Semiconductors)
PNP BD132 SILICON PLANAR EPITAXIAL POWER TRANSISTORS The BD132 are PNP transistors mounted in Jedec TO-126 plastic package. Medium power applications..

BD132 - PNP Transistor (INCHANGE)
isc Silicon PNP Power Transistor ESCRIPTION ·DC Current Gain- : hFE= 40(Min)@ IC= -0.5A ·Collector-Emitter Breakdown Voltage - : V(BR)CEO= -45V(Min.).

BD1321G - Ground Sense Low Power General Purpose Operational Amplifiers (ROHM)
Datasheet Operational Amplifier Ground Sense Low Power General Purpose Operational Amplifiers BD1321G General Description BD1321G is a single low vol.

BD134 - Silicon PNP Power Transistor (Inchange Semiconductor)
isc Silicon PNP Power Transistor DESCRIPTION ·DC Current Gain- : hFE= 40(Min)@ IC= -0.15A ·Collector-Emitter Sustaining Voltage - : VCEO(SUS)= -45V(M.

Since 2006. D4U Semicon.   |   Datasheet4U.com   |   Contact Us   |   Privacy Policy   |   Purchase of parts