BD134 Silicon PNP Power Transistor

Inchange Semiconductor

Description

isc Silicon PNP Power Transistor .
DC Current Gain- : hFE= 40(Min)@ IC= -0. Collector-Emitter Sustaining Voltage - : VCEO(SUS)= -45V(Min). Minimum Lot-to-Lot variations.

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Datasheet Specifications

Part number: BD134
Manufacturer: Inchange Semiconductor
File Size: 208.50 KB
Datasheet: BD134-InchangeSemiconductor.pdf
Description: Silicon PNP Power Transistor

Applications

* Designed for use in audio amplifiers and drivers utilizing complementary or quasi complementary circuits. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -45 V VCEO Collector-Emitter Voltage -45 V VEBO Emitter-Base Voltage -5 V IC Coll

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