Datasheet4U Logo Datasheet4U.com

BD131 - NPN Transistor

📥 Download Datasheet

Preview of BD131 PDF
datasheet Preview Page 2

Datasheet Details

Part number BD131
Manufacturer INCHANGE
File Size 203.77 KB
Description NPN Transistor
Datasheet download datasheet BD131-INCHANGE.pdf

BD131 Product details

Description

DC Current Gain- : hFE= 40(Min)@ IC= 0.5A Collector-Emitter Breakdown Voltage - : V(BR)CEO= 45V(Min.) Complement to type BD132 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for medium power and general purpose applications.ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO VCEO VEBO IC ICM IBM PC TJ Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current-Con

📁 BD131 Similar Datasheet

  • BD130 - NPN Silicon Transistor (Comset Semiconductors)
  • BD13003B - NPN Plastic Encapsulated Transistor (SeCoS)
  • BD132 - SILICON POWER TRANSISTOR (SavantIC)
  • BD1321G - Ground Sense Low Power General Purpose Operational Amplifiers (ROHM)
  • BD134 - Silicon PNP Power Transistor (Inchange Semiconductor)
  • BD135 - Complementary low-voltage transistor (STMicroelectronics)
  • BD135-10 - NPN Epitaxial Silicon Transistor (ON Semiconductor)
  • BD135-16 - NPN Epitaxial Silicon Transistor (ON Semiconductor)
Other Datasheets by INCHANGE
Published: |