BD131 Datasheet - INCHANGE

BD131, NPN Transistor

isc Silicon NPN Power Transistor INCHANGE Semiconductor BD131 DESCRIPTION *DC Current Gain- : hFE= 40(Min)@ IC= 0.5A *Collector-Emitter Brea

Applications

* Designed for medium power and general purpose applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO VCEO VEBO IC ICM IBM PC TJ Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current-Continuous Collector Current-Peak Base Current-

BD131-INCHANGE.pdf