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BD131 NPN Transistor

BD131 Description

isc Silicon NPN Power Transistor INCHANGE Semiconductor BD131 .
DC Current Gain- : hFE= 40(Min)@ IC= 0. Collector-Emitter Breakdown Voltage - : V(BR)CEO= 45V(Min. Complement to type BD132. Min.

BD131 Applications

* Designed for medium power and general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO VCEO VEBO IC ICM IBM PC TJ Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current-Continuous Collector Current-Peak Base Current-

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Datasheet Details

Part number
BD131
Manufacturer
INCHANGE
File Size
203.77 KB
Datasheet
BD131-INCHANGE.pdf
Description
NPN Transistor

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NPN Transistor INCHANGE
INCHANGE BD131-like datasheet