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BD112 Datasheet - INCHANGE

BD112 NPN Transistor

*Excellent Safe Operating Area *Collector-Emitter Breakdown Voltage- : V(BR)CEO= 60V(Min) *Collector-Emitter Saturation Voltage- : VCE(sat)= 1.0V(Max)@ IC = 5A *Good Linearity of hFE *Minimum Lot-to-Lot variations for robust device performance and reliable operation. APPLICATION.

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Datasheet Details

Part number:

BD112

Manufacturer:

INCHANGE

File Size:

175.78 KB

Description:

Npn transistor.

BD112 Distributor

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BD112 BD112 NPN Transistor INCHANGE