BD132 Datasheet - INCHANGE

BD132, PNP Transistor

isc Silicon PNP Power Transistor ESCRIPTION *DC Current Gain- : hFE= 40(Min)@ IC= -0.5A *Collector-Emitter Breakdown Voltage - : V(BR)CEO= -4

Applications

* Designed for medium power and general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -70 V VCEO Collector-Emitter Voltage -45 V VEBO Emitter-Base Voltage -6 V IC Collector Current-Continuous -3 A ICM Collecto

BD132-INCHANGE.pdf