BD132 - PNP Transistor
isc Silicon PNP Power Transistor ESCRIPTION DC Current Gain- : hFE= 40(Min)@ IC= -0.5A Collector-Emitter Breakdown Voltage - : V(BR)CEO= -45V(Min.) Complement to type BD131 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for medium power and general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -70 V VCEO Collector-Emitter Voltage -45 V.