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BD107 - Silicon NPN Power Transistor

BD107 Description

isc Silicon NPN Power Transistor .
Collector-Emitter Breakdown Voltage- : V(BR)CEO= 65V(Min). Minimum Lot-to-Lot variations for robust device performance and reliable operation.

BD107 Applications

* Designed for driver and output stages and high Power switching ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 65 V VCEO Collector-Emitter Voltage 65 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous PC Collector Power

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Datasheet Details

Part number
BD107
Manufacturer
Inchange Semiconductor
File Size
206.62 KB
Datasheet
BD107-InchangeSemiconductor.pdf
Description
Silicon NPN Power Transistor

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Silicon NPN Power Transistor Inchange Semiconductor
Inchange Semiconductor BD107-like datasheet