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BD107 Datasheet - Inchange Semiconductor

BD107 Silicon NPN Power Transistor

*Collector-Emitter Breakdown Voltage- : V(BR)CEO= 65V(Min) *Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS *Designed for driver and output stages and high Power switching ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT .

BD107-InchangeSemiconductor.pdf

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Datasheet Details

Part number:

BD107

Manufacturer:

Inchange Semiconductor

File Size:

206.62 KB

Description:

Silicon npn power transistor.

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BD107 BD107 Silicon NPN Power Transistor Inchange Semiconductor

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