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BD107 - Silicon NPN Power Transistor

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Part number BD107
Manufacturer Inchange Semiconductor
File Size 206.62 KB
Description Silicon NPN Power Transistor
Datasheet download datasheet BD107 Datasheet
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Description

Collector-Emitter Breakdown Voltage- : V(BR)CEO= 65V(Min) Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for driver and output stages and high Power switching ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 65 V VCEO Collector-Emitter Voltage 65 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous PC Collector Power Dissipation @ TC=25℃ TJ Junction

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