Datasheet Details
- Part number
- BD107
- Manufacturer
- Inchange Semiconductor
- File Size
- 206.62 KB
- Datasheet
- BD107-InchangeSemiconductor.pdf
- Description
- Silicon NPN Power Transistor
BD107 Description
isc Silicon NPN Power Transistor .
Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 65V(Min).
Minimum Lot-to-Lot variations for robust device
performance and reliable operation.
BD107 Applications
* Designed for driver and output stages and high Power switching
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
65
V
VCEO
Collector-Emitter Voltage
65
V
VEBO
Emitter-Base Voltage
5
V
IC
Collector Current-Continuous
PC
Collector Power
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