BD107 Datasheet - Inchange Semiconductor

datasheet Preview Page 1 from Datasheet4u.com

BD107 Silicon NPN Power Transistor

isc Silicon NPN Power Transistor .
Collector-Emitter Breakdown Voltage- : V(BR)CEO= 65V(Min). Minimum Lot-to-Lot variations for robust device performance and reliable operation.

BD107-InchangeSemiconductor.pdf

BD107 Datasheet Preview — Preview of BD107 PDF

Datasheet Details

Part number:

BD107

Manufacturer:

Inchange Semiconductor

File Size:

206.62 KB

Description:

Silicon NPN Power Transistor

Applications

* Designed for driver and output stages and high Power switching ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 65 V VCEO Collector-Emitter Voltage 65 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous PC Collector Power

BD107 Distributors

📁 Related Datasheet

BD101 BD101W BD101WS BD1020HFV BD1040S BD10H150CS

📌 All Tags

BD107 Silicon NPN Power Transistor Inchange Semiconductor

Inchange Semiconductor BD107-like datasheet

BD134

BD189