BD189 Silicon NPN Power Transistor

Inchange Semiconductor

Description

isc Silicon NPN Power Transistor BD189 .
DC Current Gain- : hFE= 40(Min)@ IC= 0. Collector-Emitter Sustaining Voltage - : VCEO(SUS)= 60V(Min). Complement to type BD190. Mi.

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Datasheet Specifications

Part number: BD189
Manufacturer: Inchange Semiconductor
File Size: 207.83 KB
Datasheet: BD189-InchangeSemiconductor.pdf
Description: Silicon NPN Power Transistor

Applications

* Designed for use in 5~10 Watt audio amplifiers utilizing Complementary or quasi complementary circuits. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 70 V VCEO Collector-Emitter Voltage 60 V VEBO Emitter-Base Voltage 5 V IC Collector

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