BD138 Datasheet | Specifications & PDF Download

isc Silicon PNP Power Transistor DESCRIPTION ·DC Current Gain- : hFE= 40(Min)@ IC= -0.15A ·Collector-Emitter Sustaining Voltage - : VCEO(SUS)= -60V(M

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PNP Epitaxial Silicon Transistor BD136 Series BD136 / BD138 / BD140 Applications • Complement to BD135, BD137 and BD139 Respectively • These are Pb−F

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BD136 BD138/BD140 PNP SILICON TRANSISTORS s s SGS-THOMSON PREFERRED SALESTYPES PNP TRANSISTOR DESCRIPTION The BD136, BD138 and BD140 are silicon epi

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BD136 / BD138 / BD140 — PNP Epitaxial Silicon Transistor March 2015 BD136 / BD138 / BD140 PNP Epitaxial Silicon Transistor Features • Complement to

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BD136 BD138 IBD140I SILICON PNP EPITAXIAL TYPE (PCT PROCESS) MEDIUM POWER AMPLIFIER APPLICATIONS. FEATURES . Designed for Complementary Use with BD1

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BD136G, BD138G, BD140G Plastic Medium-Power Silicon PNP Transistors This series of plastic, medium−power silicon PNP transistors are designed for use

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UNISONIC TECHNOLOGIES CO., LTD BD136-138-140 PNP EPITAXIAL SILICON TRANSISTOR PNP SILICON TRANSISTOR  DESCRIPTION The UTC BD136/BD138/BD140 are s

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