BD159 Datasheet | Specifications & PDF Download

isc Silicon NPN Power Transistor BD159 DESCRIPTION ·Collector–Emitter Sustaining Voltage- : VCEO(SUS) = 350V(Min) ·DC Current Gain- : hFE = 30~240(M

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BD157/158/159 BD157/158/159 Low Power Fast Switching Output Stages • For T.V Radio Audio Output Amplifiers 1 TO-126 2.Collector 3.Base 1. Emitter

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MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by BD159/D Plastic Medium Power NPN Silicon Transistor . . . designed for power output st

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MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by BD157/D Plastic Medium Power NPN Silicon Transistor . . . designed for power output st

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BD159G Plastic Medium-Power Silicon NPN Transistor This device is designed for power output stages for television, radio, phonograph and other consume

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