isc Silicon NPN Power Transistor BD232 DESCRIPTI.
BD232 - NPN Transistor
isc Silicon NPN Power Transistor BD232 DESCRIPTION ·Good Linearity of hFE ·High Collector-Emitter Breakdown Voltage- : V(BR)CEO= 300V(Min) ·Minimum .BD2327N50100AHF - Ultra Low Profile 0404 Balun
Model BD2327N50100AHF Rev D Ultra Low Profile 0404 Balun 50Ω to 100Ω Balanced Description The BD2327N50100AHF is a low cost, low profile sub-miniature.