BD644 Datasheet | Specifications & PDF Download

isc Silicon PNP Darlington Power Transistor BD644 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -45V(Min) ·High DC Current Gain : hF

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SEMICONDUCTORS BD644 – 646 – 648 – 650 – 652 SILICON DARLINGTON POWER TRANSISTORS PNP epitaxial-base transistors in a monolithic Dalrington circuit

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