BD684 Datasheet | Specifications & PDF Download

isc Silicon PNP Darlington Power Transistor BD684 DESCRIPTION ·Collector–Emitter Breakdown Voltage— : V(BR)CEO = -120V ·DC Current Gain— : hFE = 750

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BD676 BD682 BD678 BD684 BD680 SILICON PNP DARLINGTON POWER TRANSISTORS w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR BD

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Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company PNP DARLIGNTON POWER SILICON TRANSISTORS BD676, 676A B

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PNP BD684 – BD684A SILICON DARLINGTON POWER TRANSISTORS The BD684 and BD684A are PNP eptaxial-base transistors in monolithic Darlington circuit for a

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PNP BD684 – BD684A SILICON DARLINGTON POWER TRANSISTORS The BD684 and BD684A are PNP eptaxial-base transistors in monolithic Darlington circuit for a

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