BD949 Datasheet | Specifications & PDF Download

isc Silicon NPN Power Transistor BD949 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 60V(Min) ·DC Current Gain- : hFE= 40(Min)@ IC=

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Continental Device India Limited An IS/ISO 9002 and IECQ Certified Manufacturer TO-220 Plastic Package IS/ISO 9002 Lic# QSC/L- 000019.2 IS / IECQC 7

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SavantIC Semiconductor Product Specification Silicon NPN Power Transistors BD949 www.datasheet4u.com DESCRIPTION ·With TO-220C package ·Low colle

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isc Silicon NPN Power Transistor BD949F/951F/953F/955F DESCRIPTION ·DC Current Gain- : hFE= 40(Min)@ IC= 500mA ·Complement to Type BD950F/952F/954F/

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