BDT63B Datasheet | Specifications & PDF Download

SEMICONDUCTORS BDT63-A-B-C SILICON DARLINGTON POWER TRANSISTORS NPN epitaxial-base transistors in a monolithic Dalrington circuit and housed in a TO-

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INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor isc Product Specification BDT63F/A/B/C DESCRIPTION ·Collector Current -IC= 10A ·H

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isc Silicon NPN Darlington Power Transistor DESCRIPTION ·Collector Current -IC= 10A ·High DC Current Gain-hFE= 1000(Min)@ IC= 3A ·Complement to Type

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