BDT65B Datasheet | Specifications & PDF Download

isc Silicon NPN Darlington Power Transistor DESCRIPTION ·Collector Current -IC= 12A ·High DC Current Gain-hFE= 1000(Min)@ IC= 5A ·Complement to Type

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isc Silicon NPN Darlington Power Transistor DESCRIPTION ·Collector Current -IC= 12A ·High DC Current Gain-hFE= 1000(Min)@ IC= 5A ·Complement to Type

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SEMICONDUCTORS BDT65-A-B-C SILICON DARLINGTON POWER TRANSISTORS NPN epitaxial-base transistors in a monolithic Dalrington circuit and housed in a TO-

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