BDV64B Datasheet | Specifications & PDF Download

isc Silicon PNP Darlington Power Transistor DESCRIPTION ·Collector Current -IC= -12A ·Collector-Emitter Saturation Voltage- : VCE(sat)= -2.0V(Max.)@

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BDV64, BDV64A, BDV64B, BDV64C PNP SILICON POWER DARLINGTONS Copyright © 1997, Power Innovations Limited, UK JUNE 1993 - REVISED MARCH 1997 q Designe

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SavantIC Semiconductor Product Specification Silicon PNP Power Transistors DESCRIPTION ·With TO-3PN package www.datasheet4u.com ·Complement to type

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MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by BDV65B/D Complementary Silicon Plastic Power Darlingtons BDV65B PNP BDV64B DARLINGTON

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BDV65B (NPN), BDV64B (PNP) Complementary Silicon Plastic Power Darlingtons . . . for use as output devices in complementary general purpose amplifier

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BDV64-A-B-C PNP SILICON DARLINGTONS POWER TRANSISTORS They are silicon epitaxial base transistors mounted in TO-3PN. Theyare designed for audio output

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