Comset Semiconductor
BDY23 - (BDY23 - BDY25)NPN SILICON TRANSISTORS
BDY23, 180 T2 BDY24, 181 T2 BDY25, 182 T2 NPN SILICON TRANSISTORS, DIFFUSED MESA
LF Large Signal Power Amplification High Current Fast Switching
ABS
(10 views)
INCHANGE
BDY25 - NPN Transistor
isc Silicon NPN Power Transistor
BDY25
DESCRIPTION ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 140V(Min.) ·Collector-Emitter Saturation Voltag
(9 views)
Inchange Semiconductor
BDY25B - Silicon NPN Power Transistor
isc Silicon NPN Power Transistor
DESCRIPTION ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 140V(Min.) ·Collector-Emitter Saturation Voltage-
: VC
(8 views)
Seme LAB
BDY25A - HIGH CURRENT NPN SILICON TRANSISTOR
BDY25A
MECHANICAL DATA
Dimensions in mm (inches)
25.15 (0.99) 26.67 (1.05) 10.67 (0.42) 11.18 (0.44) 1.52 (0.06) 3.43 (0.135) 6.35 (0.25) 9.15 (0.36)
(8 views)
Seme LAB
BDY25C - Bipolar NPN Device
BDY25C
Dimensions in mm (inches).
25.15 (0.99) 26.67 (1.05) 10.67 (0.42) 11.18 (0.44) 1.52 (0.06) 3.43 (0.135)
6.35 (0.25) 9.15 (0.36)
Bipolar NPN
(7 views)
Comset Semiconductor
BDY25 - (BDY23 - BDY25)NPN SILICON TRANSISTORS
BDY23, 180 T2 BDY24, 181 T2 BDY25, 182 T2 NPN SILICON TRANSISTORS, DIFFUSED MESA
LF Large Signal Power Amplification High Current Fast Switching
ABS
(7 views)
Seme LAB
BDY25B - HIGH CURRENT NPN SILICON TRANSISTOR
BDY25B
MECHANICAL DATA
Dimensions in mm (inches)
25.15 (0.99) 26.67 (1.05) 10.67 (0.42) 11.18 (0.44)
1
2
6.35 (0.25) 9.15 (0.36)
1.52 (0.06) 3.43
(6 views)
Seme LAB
BDY25 - Bipolar NPN Device
BDY25
Dimensions in mm (inches).
25.15 (0.99) 26.67 (1.05) 10.67 (0.42) 11.18 (0.44) 1.52 (0.06) 3.43 (0.135)
6.35 (0.25) 9.15 (0.36)
Bipolar NPN
(5 views)
Comset Semiconductor
BDY24 - (BDY23 - BDY25)NPN SILICON TRANSISTORS
BDY23, 180 T2 BDY24, 181 T2 BDY25, 182 T2 NPN SILICON TRANSISTORS, DIFFUSED MESA
LF Large Signal Power Amplification High Current Fast Switching
ABS
(5 views)