Seme LAB
BDY25B - HIGH CURRENT NPN SILICON TRANSISTOR
BDY25B
MECHANICAL DATA
Dimensions in mm (inches)
25.15 (0.99) 26.67 (1.05) 10.67 (0.42) 11.18 (0.44)
1
2
6.35 (0.25) 9.15 (0.36)
1.52 (0.06) 3.43
Rating:
1
★
(2 votes)
Inchange Semiconductor
BDY25B - Silicon NPN Power Transistor
isc Silicon NPN Power Transistor
DESCRIPTION ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 140V(Min.) ·Collector-Emitter Saturation Voltage-
: VC
Rating:
1
★
(2 votes)
Comset Semiconductor
BDY23 - (BDY23 - BDY25)NPN SILICON TRANSISTORS
BDY23, 180 T2 BDY24, 181 T2 BDY25, 182 T2 NPN SILICON TRANSISTORS, DIFFUSED MESA
LF Large Signal Power Amplification High Current Fast Switching
ABS
Rating:
1
★
(2 votes)
Comset Semiconductor
BDY25 - (BDY23 - BDY25)NPN SILICON TRANSISTORS
BDY23, 180 T2 BDY24, 181 T2 BDY25, 182 T2 NPN SILICON TRANSISTORS, DIFFUSED MESA
LF Large Signal Power Amplification High Current Fast Switching
ABS
Rating:
1
★
(2 votes)
Seme LAB
BDY25 - Bipolar NPN Device
BDY25
Dimensions in mm (inches).
25.15 (0.99) 26.67 (1.05) 10.67 (0.42) 11.18 (0.44) 1.52 (0.06) 3.43 (0.135)
6.35 (0.25) 9.15 (0.36)
Bipolar NPN
Rating:
1
★
(1 votes)
Seme LAB
BDY25C - Bipolar NPN Device
BDY25C
Dimensions in mm (inches).
25.15 (0.99) 26.67 (1.05) 10.67 (0.42) 11.18 (0.44) 1.52 (0.06) 3.43 (0.135)
6.35 (0.25) 9.15 (0.36)
Bipolar NPN
Rating:
1
★
(1 votes)
Comset Semiconductor
BDY24 - (BDY23 - BDY25)NPN SILICON TRANSISTORS
BDY23, 180 T2 BDY24, 181 T2 BDY25, 182 T2 NPN SILICON TRANSISTORS, DIFFUSED MESA
LF Large Signal Power Amplification High Current Fast Switching
ABS
Rating:
1
★
(1 votes)
Seme LAB
BDY25A - HIGH CURRENT NPN SILICON TRANSISTOR
BDY25A
MECHANICAL DATA
Dimensions in mm (inches)
25.15 (0.99) 26.67 (1.05) 10.67 (0.42) 11.18 (0.44) 1.52 (0.06) 3.43 (0.135) 6.35 (0.25) 9.15 (0.36)
Rating:
1
★
(1 votes)
INCHANGE
BDY25 - NPN Transistor
isc Silicon NPN Power Transistor
BDY25
DESCRIPTION ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 140V(Min.) ·Collector-Emitter Saturation Voltag
Rating:
1
★
(1 votes)