www.DataSheet4U.com File No. Rev. No. : 2049 :A DEVICE SPECIFICATION Page No. TYPE POLARITY APPLICATION PACKAGE : BF194/BF195 : NPN : IF/RF Transis

MBF15T65PEH 650V FieldStop Trench IGBT Datasheet MBF15T65PEH 650V Field Stop IGBT General Description Features This IGBT is produced using advance

LEGM75BF120L5H Jan.2021 IGBT Power Module Features: • VCE=1200V IC=75A • Low VCE(sat) • VCEsat with positive temperature coefficient • Maximum junct

BF 1005 Silicon N-Channel MOSFET Tetrode • For low noise, high gain controlled input stages up to 1GHz • Operating voltage 5V • Integrated stabilized

BF 1009 Silicon N-Channel MOSFET Tetrode • For low noise, high gain controlled input stages up to 1GHz • Operating voltage 9 V • Integrated stabilized

Silicon N-Channel MOSFET Tetrode • For low noise, high gain controlled input stages up to 1 GHz • Operating voltage 5 V • Integrated biasing network •

MB9B160R Series 32-Bit ARM® Cortex®-M4F FM4 Microcontroller The MB9B160R Series are a highly integrated 32-bit microcontrollers dedicated for embedde

MBF005 THRU MBF10 Single-Phase Glass Passivated Silicon Bridge Rectifier Reverse Voltage - 50 to 1000 V Forward Current – 0.5 A Features • Glass pass

Preliminary Data Sheet PD-20482 rev. B 06/99 10BF.. Series SURFACE MOUNTABLE ULTRAFAST RECOVERY DIODE SMB (DO-214AA) Major Ratings and Characteristi

www.DataSheet4U.com File No. Rev. No. : 2049 :A DEVICE SPECIFICATION Page No. TYPE POLARITY APPLICATION PACKAGE : BF194/BF195 : NPN : IF/RF Transis

FSBF15CH60BT Motion SPM® 3 Series FSBF15CH60BT Motion SPM® 3 Series January 2014 Features • UL Certified No. E209204 (UL1557) • 600 V - 15 A 3-Phas

BF 1009S Silicon N-Channel MOSFET Tetrode • For low noise, high gain controlled input stages up to 1GHz • Operating voltage 9V • Integrated bias netwo

BF1009S Silicon N_Channel MOSFET Tetrode • For low noise, high gain controlled input stage up to 1 GHz • Operating voltage 9 V • Integrated biasing

BF199 NPN Silicon Transistor Feature: • NPN Silicon Planar Epitaxial RF Transistor. TO-92 Plastic Package Dimensions Minimum Maximum A 4.32 5.33 B

Data Sheet FEATURES High PSAT: 46 dBm High power gain: 20 dB High PAE: 38% Instantaneous bandwidth: 0.3 GHz to 6 GHz Supply voltage: VDD = 50 V at 130

( DataSheet : www.DataSheet4U.com ) www.DataSheet4U.com www.DataSheet4U.com www.DataSheet4U.com

BF1009SW Silicon N-Channel MOSFET Tetrode
For low noise, high gain controlled 3 4 input stages up to 1GHz
Operating voltage 9V
Integrated bias

IMBF170R1K0M1 CoolSiC™ 1700 V SiC Trench MOSFET Final datasheet CoolSiC™ 1700 V SiC Trench MOSFET : Silicon Carbide MOSFET Features • VDSS = 1700 V

Silicon N-Channel MOSFET Tetrode • For low noise, high gain controlled input stages up to 1 GHz • Operating voltage 5V • Integrated biasing network •