BF1 Datasheet | Specifications & PDF Download

SBF1040CT THRU SBF1065CT 10A High Power Schottky Barrier Rectifiers ■ Features • Low power loss, high efficiency. • High current capability, low forw

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VOLTAGE RANGE: 6.8 - 440 V POWER: 600Wa t t s Features Glass Passivated Die Construction Uni- and Bi-Directional Versions Available Excellent Cl

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VOLTAGE RANGE: 6.8 - 440 V POWER: 600Wa t t s Features Glass Passivated Die Construction Uni- and Bi-Directional Versions Available Excellent Cl

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Product Search Data Sheet PRF15BF102RB6RC Note: This datasheet may be out of date. Please download the latest datasheet of PRF15BF102RB6RC from the o

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RUSBF Series Radial Leaded PTC Datasheet RoHS Additional Information Resources Accessories Samples Description Littelfuse PolySwitch radial-lea

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RUSBF Series Radial Leaded PTC Datasheet RoHS Additional Information Resources Accessories Samples Description Littelfuse PolySwitch radial-lea

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RUSBF Series Radial Leaded PTC Datasheet RoHS Additional Information Resources Accessories Samples Description Littelfuse PolySwitch radial-lea

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RUSBF Series Radial Leaded PTC Datasheet RoHS Additional Information Resources Accessories Samples Description Littelfuse PolySwitch radial-lea

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RUSBF Series Radial Leaded PTC Datasheet RoHS Additional Information Resources Accessories Samples Description Littelfuse PolySwitch radial-lea

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RUSBF Series Radial Leaded PTC Datasheet RoHS Additional Information Resources Accessories Samples Description Littelfuse PolySwitch radial-lea

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Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN SILICON PLANAR EPITAXIAL TRANSISTOR BF199 TO-92 Plasti

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BF 1005 Silicon N-Channel MOSFET Tetrode • For low noise, high gain controlled input stages up to 1GHz • Operating voltage 5V • Integrated stabilized

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Silicon N-Channel MOSFET Tetrode • For low noise, high gain controlled input stages up to 1 GHz • Operating voltage 5V • Integrated biasing network •

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Silicon N-Channel MOSFET Tetrode • For low noise, high gain controlled input stages up to 1 GHz • Operating voltage 5V • Integrated biasing network •

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BF 1005S Silicon N-Channel MOSFET Tetrode • For low noise, high gain controlled input stages up to 1GHz • Operating voltage 5V • Integrated stabilized

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Silicon N-Channel MOSFET Tetrode • For low noise, high gain controlled input stages up to 1 GHz • Operating voltage 5 V • Integrated biasing network •

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Silicon N-Channel MOSFET Tetrode • For low noise, high gain controlled input stages up to 1 GHz • Operating voltage 5 V • Integrated biasing network •

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BF1005S Silicon N-Channel MOSFET Tetrode • For low noise, high gain controlled input stages up to 1 GHz • Operating voltage 5 V • Integrated biasin

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BF1005 Silicon N-Channel MOSFET Tetrode • For low noise, high gain controlled input stages up to 1 GHz • Operating voltage 5V • Integrated biasing

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