BF259 Datasheet | Specifications & PDF Download

High Voltage Power Transistor Pin Configuration 1. Emitter 2. Base 3. Collector Features: •  Devices with breakdown voltages of 160V minimum •  NPN

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BF257 BF258-BF259 HIGH VOLTAGE VIDEO AMPLIFIERS DESCRIPTION The BF257, BF258 and BF259 are silicon planar epitaxial NPN transistors in Jedec TO-39 met

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MAXIMUM RATINGS Rating Collector-Emitter Voltage Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current - Contin

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Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN SILICON HIGH VOLTAGE TRANSISTORS BF257, BF 258, BF259

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MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by PBF259/D High Voltage Transistors NPN Silicon COLLECTOR 3 2 BASE 1 EMITTER PBF259 PBF

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BF259 Dimensions in mm (inches). 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) 12.70 (0.500) min. (00.0.8395)max. 0.4

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MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by PBF259/D High Voltage Transistors NPN Silicon COLLECTOR 3 2 BASE 1 EMITTER PBF259 PBF

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